P
Primit Parikh
Researcher at Cree Inc.
Publications - 88
Citations - 3168
Primit Parikh is an academic researcher from Cree Inc.. The author has contributed to research in topics: Layer (electronics) & Transistor. The author has an hindex of 27, co-authored 88 publications receiving 3126 citations. Previous affiliations of Primit Parikh include University of California.
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Patent
Insulating gate AlGaN/GaN HEMT
TL;DR: In this article, an AlGaN/GaN HEMT with a 2DEG formed between the barrier layer and the high resistivity layer is described, where an insulating layer is included on the uncovered surface of the barrier.
Patent
Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
TL;DR: In this paper, a carrier substrate (20) having a top surface and a bottom surface, first and second conductive vias (22S, B) extending from the top surface of the carrier substrate to the bottom surface of a substrate, and a bond pad (24) on the top of the substrate in electrical contact with the first conductive via (22A).
Patent
Wide bandgap transistor devices with field plates
Primit Parikh,Yifeng Wu +1 more
TL;DR: In this article, a transistor structure comprising an active semiconductor layer with metal source and drain contacts (20, 22) formed in electrical contact with the active layer is described. And a gate contact (26) is formed between the source/drain contacts for modulating electric fields within the active layers.
Patent
Enhancement Mode III-N HEMTs
TL;DR: In this article, the concentration of Al in the AlXN layer, the Al XN layer thickness, and the n-doping concentration in the ndoped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2 DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
Patent
Semiconductor heterostructure diodes
TL;DR: In this paper, a planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconducting layers are presented.