Q
Qingrui Tu
Researcher at Zhejiang University
Publications - 13
Citations - 2065
Qingrui Tu is an academic researcher from Zhejiang University. The author has contributed to research in topics: Voltage & Pulse-width modulation. The author has an hindex of 7, co-authored 8 publications receiving 1807 citations.
Papers
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Journal ArticleDOI
Reduced Switching-Frequency Modulation and Circulating Current Suppression for Modular Multilevel Converters
Qingrui Tu,Zheng Xu,Lie Xu +2 more
TL;DR: In this paper, a modified phase-shifted carrier-based pulsewidth-modulation (PSC-PWM) scheme for modular multilevel converters (MMC) is presented.
Journal ArticleDOI
Impact of Sampling Frequency on Harmonic Distortion for Modular Multilevel Converter
Qingrui Tu,Zheng Xu +1 more
TL;DR: In this article, the authors applied nearest level control (NLC) to the modular multilevel converter (MMC) and analyzed the voltage harmonics in order to select a proper sampling frequency, which significantly influenced the output voltage levels and voltage total harmonic distortions.
Journal ArticleDOI
Suppressing DC Voltage Ripples of MMC-HVDC Under Unbalanced Grid Conditions
TL;DR: In this paper, a supplementary dc voltage ripple suppressing controller (DCVRSC) is proposed to eliminate the second-order harmonic in the dc voltage of the MMC-HVDC system.
Journal ArticleDOI
Modulation and Control for a New Hybrid Cascaded Multilevel Converter With DC Blocking Capability
Yinglin Xue,Zheng Xu,Qingrui Tu +2 more
TL;DR: In this article, a novel asymmetrical square-wave modulation at a very low frequency is proposed, and the energy flow of the wave-shaping circuit under this modulation is analyzed. And the capability to limit the short-circuit current during the dc fault is investigated, and fast ac overcurrent protection is designed.
Proceedings ArticleDOI
Power losses evaluation for modular multilevel converter with junction temperature feedback
Qingrui Tu,Zheng Xu +1 more
TL;DR: In this article, a junction temperature feedback method is proposed to estimate the power losses more accurately, based on the data provided by the manufacture, the characteristic of semiconductor device is acquired.