Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

https://science.sciencemag.org/content/sci/291/5510/1947.full.pdf

Nanobelts of Semiconducting Oxides

A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

The structural and luminescence properties of porous silicon

https://zenodo.org/record/1258680/files/article.pdf

The influences of temperature and microstructure on the tensile properties of a CoCrFeMnNi high-entropy alloy

The physical and chemical properties of nanophase materials rely on their crystal and surface structures. Transmission electron microscopy (TEM) is a powerful and unique technique for structure characterization. The most important application of TEM is the atomic-resolution real-space imaging of nanoparticles. This article introduces the fundamentals of TEM and its applications in structural determination of shape-controlled nanocrystals and their assemblies. By forming a nanometer size electron probe, TEM is unique in identifying and quantifying the chemical and electronic structure of individual nanocrystals. Electron energy-loss spectroscopy analysis of the solid-state effects and mapping the valence states are even more attractive. In situ TEM is demonstrated for characterizing and measuring the thermodynamic, electric, and mechanical properties of individual nanostructures, from which the structure−property relationship can be registered with a specific nanoparticle/structure.

Transmission Electron Microscopy of Shape-Controlled Nanocrystals and Their Assemblies

A broad review of recent research work on the preparation and the remarkable properties of intercalation compounds of graphite, covering a wide range of topics from the basic chemistry, physics and materials science to engineering applications.

Intercalation compounds of graphite

In continuation of an earlier publication (Hoppe et al., 1968), further experiments are described here on the preparation of thin film sections of embedded Backscatter Kikuchi diffraction in the SEM for identification of crystallographic thin films by electron microscopy Peter B. Hirsch, Electron Works by Peter B. Hirsch: Electron Microscopy of Thin Crystals Peter B. Hirsch Author of Electron Microscopy of Thin Crystals

R. B. Nicholson

Papers

Electron Microscopy of Thin Crystals