A generalized expression for charge carrier transport and absorption-limited sensitivity of x-ray photoconductors is derived by analytically solving the continuity equation for both holes and electrons considering the drift of electrons and holes in the presence of deep traps The normalized sensitivity equation is applied to stabilized a-Se and HgI2 In the latter case, the sensitivity model is fitted to published data to determine the electron and hole ranges (64×10−6 cm2/V and 7×10−8 cm2/V, respectively) in screen-printed polycrystalline HgI2

Charge collection and absorption-limited sensitivity of x-ray photoconductors: Applications to a-Se and HgI2

Present status of room temperature semiconductor detectors

Recent advances in X-ray photoconductors for direct conversion X-ray image detectors

Crystal growth and applications of mercuric iodide

Low temperature photoluminescence of detector-grade HgI2

The influence of native defects in detector grade mercuric iodide crystals has been investigated by doping with either mercury or iodine. Measurements have been made of mobility-lifetime products and of thermally stimulated conductivity in undoped, Hg doped, and I2 doped crystals. The results are discussed in terms of different trapping mechanisms.

Native Defect Compensation in HgI2 Crystals

Development of mercuric iodide nuclear detectors in our laboratory has concentrated on crystalline perfection, optimization of electronic properties, and device fabrication. Increased crystalline perfection can be obtained with better crystal growth temperature control combined with slightly modified growth parameters. Adjustment of the stoichiometry of the crystal growth source material has increased the mobility-trapping time (??) product for the holes. Preliminary experiments with different contact materials and contacting techniques gave ambivalent results.

Recent Improvements in HgI2 Detectors

The influence of native defects in detector grade mercuric iodide crystals has been investigated by doping with either mercury or iodine. Measurements have been made of mobility-lifetime products and of thermally stimulated conductivity in undoped, Hg doped, and I/sub 2/ doped crystals. The results are discussed in terms of different trapping mechanisms.

R.C. Whited

Papers

Native Defect Compensation in HgI2 Crystals

Recent Improvements in HgI2 Detectors

Native defect compensation in HgI/sub 2/ crystals