Semiconductor-based thermal neutron detectors provide a compact technology for neutron detection and imaging. Such devices can be produced by externally coatingsemiconductor-charg ed-particle detectors with neutron reactive films that convert free neutrons into charged-particle reaction products. Commonly used films for such devices utilize the 10 B(n,a) 7 Li reaction or the 6 Li(n,a) 3 H reaction, which are attractive due to the relatively high energies imparted to the reaction products. Unfortunately, thin film or ‘‘foil’’ type thermal neutron detectors suffer from self-absorption effects that ultimately limit neutron detection efficiency. Design considerations that maximize the efficiency and performance of such devices are discussed. Theoretical and experimental results from front coated, back coated, and ‘‘sandwich’’ designs are presented. r 2002 Elsevier Science B.V. All rights reserved. PACS: 29.40.W

Design considerations for thin film coated semiconductor thermal neutron detectors—I: basics regarding alpha particle emitting neutron reactive films

Due to events of the past two decades, there has been new and increased usage of radiation-detection technologies for applications in homeland security, nonproliferation, and national defense. As a result, there has been renewed realization of the materials limitations of these technologies and greater demand for the development of next-generation radiation-detection materials. This review describes the current state of radiation-detection material science, with particular emphasis on national security needs and the goal of identifying the challenges and opportunities that this area represents for the materials-science community. Radiation-detector materials physics is reviewed, which sets the stage for performance metrics that determine the relative merit of existing and new materials. Semiconductors and scintillators represent the two primary classes of radiation detector materials that are of interest. The state-of-the-art and limitations for each of these materials classes are presented, along with possible avenues of research. Novel materials that could overcome the need for single crystals will also be discussed. Finally, new methods of material discovery and development are put forward, the goal being to provide more predictive guidance and faster screening of candidate materials and thus, ultimately, the faster development of superior radiation-detection materials.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400030016

Radiation Detector Materials: An Overview

A summary is presented of the present status of several compound semiconductor radiation detectors, including detectors fabricated from GaAs, HgI2, CdTe, Cd1−xZnxTe and PbI2

R. M. Williamson

Papers

Nuclear radiation detection