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R.W. Johnstone

Researcher at Simon Fraser University

Publications -  42
Citations -  522

R.W. Johnstone is an academic researcher from Simon Fraser University. The author has contributed to research in topics: Surface micromachining & Optical switch. The author has an hindex of 15, co-authored 42 publications receiving 506 citations. Previous affiliations of R.W. Johnstone include University of Alberta.

Papers
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Proceedings ArticleDOI

Deflection response of electro-thermal actuators to voltage and power

TL;DR: In this article, the authors show that the deflection response of electro-thermal actuators is linearly proportional to the input voltage over a wide range of input voltages, depending on the temperature coefficients of electrical resistivity and the temperature coefficient of thermal resistivity.

Inexpensive and portable sample-in-answer-out genetic analysis systems for point of care applications

TL;DR: Two sample-in-answer-out integrated, automated, and inexpensive lab-on-a-chip systems that accept raw patient sample, perform sample preparation to extract the genetic material, and perform genetic amplification and analysis are presented.
Proceedings ArticleDOI

Required minimum feature spacing for commercial viability of raised surface micromachined optical systems

TL;DR: In this article, the authors derived a value for the required minimum feature spacing necessary for surface micromachined optical systems to achieve commercial viability, assuming that the highest insertion loss acceptable in a commercial optical switch is 1 dB.
Patent

Method for assembling micro structures

TL;DR: In this paper, a plurality of components, each of which is pivotally coupled to the substrate by one or more micromachined hinges, are moved using electrostatic forces which lift the components from the surface of the substrate.
Book ChapterDOI

Non-Ideal Processes

TL;DR: In many types of thin-film deposition, film growth is conformal as discussed by the authors and the shape of a deposited layer follows the topography of the underlying wafer surface when deposition occurred.