The demand for lightweight converters with high control performance and low acoustic noise led to an increase in switching frequencies of hard switched two-level low-voltage 3-phase converters over the last years. For high switching frequencies, converter efficiency suffers and can be kept high only by employing cost intensive switch technology such as SiC diodes or CoolMOS switches; therefore, conventional IGBT technology still prevails. In this paper, the alternative of using three-level converters for low-voltage applications is addressed. The performance and the competitiveness of the three-level T-type converter (3LT2C) is analyzed in detail and underlined with a hardware prototype. The 3LT2 C basically combines the positive aspects of the two-level converter such as low conduction losses, small part count and a simple operation principle with the advantages of the three-level converter such as low switching losses and superior output voltage quality. It is, therefore, considered to be a real alternative to two-level converters for certain low-voltage applications.

Design and Implementation of a Highly Efficient Three-Level T-Type Converter for Low-Voltage Applications

It is expected that in the near future the use of high-voltage dc (HVDC) transmission and medium-voltage dc (MVDC) distribution technology will expand. This development is driven by the growing share of electrical power generation by renewable energy sources that are located far from load centers and the increased use of distributed power generators in the distribution grid. Power converters that transfer the electric energy between voltage levels and control the power flow in dc grids will be key components in these systems. The recently presented modular multilevel dc converter (M2DC) and the three-phase dual-active bridge converter (DAB) are benchmarked for this task. Three scenarios are examined: a 15 MW converter for power conversion from an HVDC grid to an MVDC grid of a university campus, a gigawatt converter for feeding the energy from an MVDC collector grid of a wind farm into the HVDC grid, and a converter that acts as a power controller between two HVDC grids with the same nominal voltage level. The operation and degrees of freedom of the M2DC are investigated in detail aiming for an optimal design of this converter. The M2DC and the DAB converter are thoroughly compared for the given scenarios in terms of efficiency, amount of semiconductor devices, and expense on capacitive storage and magnetic components.

Comparison of the Modular Multilevel DC Converter and the Dual-Active Bridge Converter for Power Conversion in HVDC and MVDC Grids

DC microgrids have attracted significant attention over the last decade in both academia and industry. DC microgrids have demonstrated superiority over AC microgrids with respect to reliability, efficiency, control simplicity, integration of renewable energy sources, and connection of dc loads. Despite these numerous advantages, designing and implementing an appropriate protection system for dc microgrids remains a significant challenge. The challenge stems from the rapid rise of dc fault current which must be extinguished in the absence of naturally occurring zero crossings, potentially leading to sustained arcs. In this paper, the challenges of DC microgrid protection are investigated from various aspects including, dc fault current characteristics, ground systems, fault detection methods, protective devices, and fault location methods. In each part, a comprehensive review has been carried out. Finally, future trends in the protection of DC microgrids are briefly discussed.

/pdf/dc-microgrid-protection-a-comprehensive-review-38dp561hfd.pdf

DC Microgrid Protection: A Comprehensive Review

High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits. The primary objectives of this paper are to discuss existing voltage-balancing techniques, to present a novel hybrid voltage-balancing technique, and to optimize the number of insulated gate bipolar transistors (IGBTs) in a series string in terms of power losses. The novel voltage-balancing technique can achieve good voltage balancing with a minimum number of components and minimum total losses (i.e., IGBT losses and balancing circuit losses). This technique was validated by both simulation and experimental work. The power loss of a high-voltage switch depends on the voltage-balancing circuit and the number of IGBTs in series and switching frequency. For a given application, the optimum number of IGBTs, in terms of power losses, depends on device characteristics and switching frequency.

Series connection of insulated gate bipolar transistors (IGBTs)

High-voltage dc/dc converters play an important role in HVDC grids. Isolated modular dc/dc converters (IMDCCs) based on modular multilevel converter technology provide a good solution to high-voltage applications. In order to reduce the size of the system, the IMDCC is required to be operated with a high ac-link frequency, but this will lead to increased switching loss and thus degraded efficiency. This paper proposes a soft-switching operation scheme for such an IMDCC. In this scheme, a quasi-square-wave (QSW) modulation method is employed, where the chain-links generate quasi-square terminal voltages with reduced dv / dt . With such chain-link terminal voltages, the arm currents which provide good condition for the soft-switching operation of the QSW-IMDCC can be obtained. Since soft switching can be achieved for the power switches, the proposed scheme will suffer less switching loss, thus improving the efficiency of the converter. Moreover, a capacitor voltage-balancing control strategy is proposed. This strategy does not need any arm current sensors, thus reducing the cost. The proposed soft-switching operation scheme and capacitor voltage-balancing control strategy are verified by the simulation results.

Soft-Switching Operation of Isolated Modular DC/DC Converters for Application in HVDC Grids

The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model

Igbt Parameter Extraction for the Hefner IGBT Model

The demand for high voltage switches can be achieved by connecting power devices in series. The main problem associated with series connected devices is the unequal sharing of the switch voltage by each device. In this paper, a hybrid voltage balancing method suitable for use with series strings of IGBT is described. The method combines active gate control with passive snubber circuits to yield a simple gate control circuit and to minimise the switching power losses. Simulations show that the method is capable of good voltage balancing during turn-off and turn-on transients.

http://ieeexplore.ieee.org/iel5/9986/32065/01492012.pdf

R. Withanage

Papers

Series connection of insulated gate bipolar transistors (IGBTs)

Igbt Parameter Extraction for the Hefner IGBT Model

Hybrid low loss voltage balancing method for series connection of IGBTs