In this paper, a physics-based high-frequency (HF) model of switching power converters including the insulated gate bipolar transistor (IGBT) unit cells, heat sink, and connective printed circuit board (PCB) traces combined in a single electrical circuit is presented. The IGBT model includes the HF stray components superimposed on the well-known Hefner IGBT model. The HF components were calculated using a 3-D quasi-static finite element (3-D FE) analysis. The proposed complex model of the IGBT was verified both numerically and experimentally at different switching frequencies. The computed IGBT model was used in a low-high frequency model of a motor-drive system, and the common mode ground current was experimentally verified showing excellent results.

Physics-Based Modeling of Power Converters From Finite Element Electromagnetic Field Computations

This paper presents a new lumped-charge approach-based physical model for high power soft-punchthrough (SPT) insulated gate bipolar transistor (IGBT). The IGBT physical models should consider the fabrication technologies used to optimize the device behavior for specific applications. The proposed model focuses on the chip structure designed by ABB for high power IGBT and can apply to other IGBTs with homogeneous structures. Based on the SPT+ concept combined with an enhanced planar cell design for the optimization of lower power losses, different particular mathematical approaches are used to describe their functions in the proposed model. The temperature dependence of the model is also included because the chip temperature of IGBT in practical applications is higher than the room temperature and changed with service conditions. The physics-based IGBT model has been implemented in PSpice and validated with experiments, which considers both the block voltage nonpunchthrough condition and punchthrough condition during turn-OFF transient. The simulation results show a good agreement with the experiment results.

/pdf/a-lumped-charge-approach-based-physical-spice-model-for-high-7bqiqrun54.pdf

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

Simulation model and parameter extraction of Field-Stop (FS) IGBT

This paper deals with time domain simulation of common mode (CM) conducted disturbances in power electronics. This study proposes a proof of concept of a fast reconstruction method (FRM), which allows to compute the spectrum of a current based on the knowledge of a single pulse of current (i.e., the knowledge of the disturbances on a small fraction of time) and of the switching instants (i.e., the control strategy of the structure). The first parts of the paper demonstrate the reliability of the method using data measurements of a CM current generated by a PWM half-bridge converter and then by a three phase inverter. The simulation time saved thanks to the FRM is then quantified by comparing the simulation durations with or without using the FRM. In our example, the FRM allows to divide the simulation time by about 10. This analysis points out that the complex information of a CM current is contained in a small time interval. As a consequence the complete spectrum can be predicted with only a very fast simulation. The mathematical techniques developed here forecast promising reduction of simulation durations.

/pdf/fast-reconstitution-method-frm-to-compute-the-broadband-1pro8ltnym.pdf

Fast Reconstitution Method (FRM) to Compute the Broadband Spectrum of Common Mode Conducted Disturbances

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

http://koreascience.or.kr:80/article/JAKO201616960501301.pdf

An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model

S. Tennakoorr

Papers

Igbt Parameter Extraction for the Hefner IGBT Model