The present invention provides the production of apertured openings or trenches in layers or substrates composed of n-doped silicon proceeding in an electrolytic way, whereby the silicon is connected as a positively polarized electrode of an electrolysis cell containing an agent that contains hydrofluoric acid. Hole structures having highly variable cross-section can be reproducibly manufactured with the method of the invention and holes can be localized by prescribing nuclei. The invention can be used in the manufacture of trench cells in memory modules, insulating trenches in LSI semiconductor circuits, large-area capacitors (varicaps), and in contacting more deeply disposed layers in disconnectable and voltage-controlled thyristors.

Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon

The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. In one embodiment, a photodiode array comprises a substrate having at least a front side and a back side, a plurality of diode elements integrally formed in the substrate forming the array, wherein each diode element has a p+ fishbone pattern on the front side, and wherein the p+ fishbone pattern substantially reduces capacitance and crosstalk between adjacent photodiodes, a plurality of front surface cathode and anode contacts, and wire interconnects between diode elements made through a plurality of back surface contacts.

Thin wafer detectors with improved radiation damage and crosstalk characteristics

A dense, vertical MOS FET memory cell has a high charge storage capacitance per unit area of substrate surface The charge storage capacitor structure is formed within a well etched in the silicon semiconductor substrate by a combination of reactive ion etching and a self-limiting wet etch

Fet memory cell structure and process

The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

High Density Photodiodes

This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.

Deep diffused thin photodiodes

The specification describes a method for preparing a thin silicon high resolution shadow mask, the latter adapted especially for use in processing materials by ion implantation. The method makes use of the preferential etch technique for silicon in which, for example, n+ material can be electrolytically removed in preference to higher resistivity ntype silicon. A thin (e.g. < 10 Mu ) epitaxial layer of n-silicon is deposited on an n+ substrate. The open regions of the mask are then converted, through the thickness of the epitaxial layer, to n+ material. After exposure to the preferential electrolytic etch treatment, a thin silicon shadow mask is left. Also disclosed are ribbed structures for enhancing the physical durability of the mask and techniques using crystallographic etching for further improving resolution.

Rae A Mac

Papers

Preparation of high resolution shadow masks