AbstractGallium nitride (GaN) based High-Electron-Mobility Transistors (HEMTs), and in particular, aluminum gallium nitride (AlGaN)/GaN devices have become a popular choice due to their ability to produce higher power densities at higher frequencies as compared to their silicon (Si) and gallium arsenide (GaAs) based counterparts. GaN-based HEMTs have also proven to be excellent candidates for amplifiers operating at higher power levels, high temperatures, and in robust environments. This chapter discusses how the performance of such GaN-based HEMTs can be enhanced by introducing a gate oxide and an underlapped structure. The chapter also delves into the advantages of multigate structures and the use of quaternary indium aluminum gallium nitride (InAlGaN) compound to deliver higher breakdown voltage.KeywordsMOS-HEMTDG GaN HEMTUnderlap structure 

Multigate MOS-HEMT

In this work, a comparative study of analog performance is undertaken for symmetric and asymmetric source/drain underlap Double Gate (DG) heterojunction based AlGaN/GaN Metal Oxide High Electron Mobility Transistors (DG MOS-HEMTs). The analog parameters considered for this analysis are Drain current (I D ), Transconductance (g m ) and Intrinsic Gain (g m R O ). A 31.07% and 7.77% higher ON current is achieved for source underlap device when compared with symmetric and drain underlap devices respectively; and a incremented transconductance peak for source underlap device is also established with peak of 16.35% and 5.58% higher than compared to symmetric and drain underlap devices respectively, however the symmetric underlap device shows an Intrinsic gain peak of 60.44% and 58.38% higher than that of source and drain underlap devices respectively.

Raushan Kumar

Papers

Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT