R
Rebecca Martinez
Researcher at ESR Technology
Publications - 10
Citations - 73
Rebecca Martinez is an academic researcher from ESR Technology. The author has contributed to research in topics: Wafer & Surface roughness. The author has an hindex of 6, co-authored 10 publications receiving 70 citations.
Papers
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Proceedings ArticleDOI
Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially growth infrared detectors
TL;DR: In this paper, the growth and surface characterisation of ultra-flat 4" GaSb substrates suitable for the deposition of advanced infrared detectors are described and a 'blueprint' for the manufacture of large diameter GaSB substrates is presented.
Proceedings ArticleDOI
Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors
Mark J. Furlong,Rebecca Martinez,Sasson Amirhaghi,Dmitri Loubychev,Joel M. Fastenau,Xing Gu,Amy W. K. Liu +6 more
TL;DR: In this article, newly developed 4" GaSb substrates are investigated for their suitability in the epitaxial growth of type II GAs/GaInSb superlattice detectors.
Proceedings ArticleDOI
Large diameter 'ultra-flat' epitaxy ready GaSb substrates: requirements for MBE grown advanced infrared detectors
TL;DR: In this article, the authors describe the crystal growth and surface characterisation of "ultra-flat" 4" GaSb substrates suitable for the deposition of advanced infrared detectors. And they conclude with a 'blueprint' for the manufacture of large diameter GaSB======
Proceedings ArticleDOI
Scaling up antimonide wafer production: innovation and challenges for epitaxy ready GaSb and InSb substrates
TL;DR: In this paper, the growth and characterization of antimonide-based compound semiconductor substrates was described and the Czochralski technique was used to grow single crystals of 4" InSb and 4" GaSb with dislocation densities of======<20/cm2 and <100/ cm2, respectively.
Proceedings ArticleDOI
MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates
Amy W. K. Liu,Dmitri Lubyshev,Yueming Qiu,Joel M. Fastenau,Ying Wu,Mark J. Furlong,Marius Tybjerg,Rebecca Martinez,Andrew Mowbray,Brian Smith +9 more
TL;DR: In this article, the MBE growth of generic MWIR bulk nBn photodetectors on 6-inch diameter GaSb substrates was reported, and the surface morphology, optical and structural quality of the epiwafers as evaluated by atomic force microscopy (AFM), Nomarski microscopy, low temperature photoluminescence (PL) spectroscopy, and high-resolution x-ray diffraction (XRD) was discussed.