An integrally packaged integrated circuit device including an integrated circuit die including a crystalline substrate having first and second generally planar surfaces and edge surfaces and an active surface formed on the first generally planar surface, at least one chip scale packaging layer formed over the active surface and at least one electrical contact formed over the at least one chip scale packaging layer, the at least one electrical contact being connected to circuitry on the active surface by at least one pad formed on the first generally planar surface.

Methods and apparatus for packaging integrated circuit devices

Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Acoustic resonator performance enhancement using alternating frame structure

A packaged semiconductor chip includes features such as a chip carrier having a large thermal conductor which can be solder-bonded to a circuit board so as to provide enhanced thermal conductivity to the circuit board and electromagnetic shielding and a conductive enclosure which partially or completely surrounds the packaged chip to provide additional heat dissipation and shielding. The packaged unit may include both an active semiconductor chip and a passive element, desirably in the form of a chip, which includes resistors and capacitors. Inductors may be provided in whole or in part on the chip carrier. A module includes two circuits and an enclosure with a medial wall between the circuits to provide electromagnetic shielding between the circuits.

High-frequency chip packages

A competitive, simple, single-substrate wafer-level packaging technique capable of creating a vacuum-sealed protective cavity around moving or other particular components of a MEMS is described. The technique uses common semiconductor materials, processing steps and equipment to provide a stable vacuum environment of, for example less than 1 Pa, in a sealed cavity. The environment protects components of the MEMS against micro-contamination from particles and slurry of a waver dicing process and against fluctuations of atmospheric condition to ensure long term reliability.

Wafer-level MEMS packaging

A cavity forming formed in an encapsulation structure under a vacuum in a vacuum chamber is sealed with a capping layer. A stiff protective layer under tensile stress is deposited on the capping layer prior to venting the vacuum chamber to atmospheric pressure. The capping layer is preferably aluminum or an aluminum alloy, and the protective layer is preferably δ-TiN having a suitable high Young's modulus.

Fabrication of microstructures with vacuum-sealed cavity

A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer A peripheral pad on the base wafer encompasses the bonding pads and the micro device A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system

Microcap wafer-level package

A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.

Film deposition to enhance sealing yield of microcap wafer-level package with vias

A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by mass loading piezoelectric (PZ) layer between two electrodes. For a substrate having multiple resonators, only selected resonator is mass loaded to provide resonators having different resonance frequencies on the same substrate.

Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method

A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.

Bulk acoustic resonator perimeter reflection system

An apparatus having both a resonator and an inductor fabricated on a single substrate and a method of fabricating the apparatus are disclosed. The apparatus includes a resonator and an inductor that is connected to the resonator. Both the resonator and the inductor are fabricated over their respective cavities to produce a high Q-factor filter circuit.

Richard C. Ruby

Papers

Microcap wafer-level package

Film deposition to enhance sealing yield of microcap wafer-level package with vias

Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method

Bulk acoustic resonator perimeter reflection system

Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same