R
Rigardt Alfred Maarten Coetzee
Researcher at University of Johannesburg
Publications - 16
Citations - 294
Rigardt Alfred Maarten Coetzee is an academic researcher from University of Johannesburg. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 4, co-authored 14 publications receiving 159 citations. Previous affiliations of Rigardt Alfred Maarten Coetzee include Tshwane University of Technology.
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New development of atomic layer deposition: processes, methods and applications.
Peter Ozaveshe Oviroh,Rokhsareh Akbarzadeh,Dongqing Pan,Rigardt Alfred Maarten Coetzee,Tien-Chien Jen +4 more
TL;DR: This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods.
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The mechanistic effect over the substrate in a square type atomic layer deposition reactor
TL;DR: The atomic layer deposition (ALD) technique is well-known to deposit ultra-thin, uniform, conformal and pinhole-free nano-films on complex to....
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Operating pressure influences over micro trenches in exposure time introduced atomic layer deposition
TL;DR: In this paper, the effect of the operating pressure on the mechanistic, species transport and reaction rates of the atomic layer deposition (ALD) process has been investigated using the computational fluid dynamic approach.
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Optimal slope angle selection of an evacuated tube collector for domestic solar water heating
TL;DR: In this paper, a 20 receiver tube collector with internal heat pipes was investigated for the production of hot service-water for domestic use during all seasons in Pretoria, South Africa, focusing on the prediction of seasonal hourly performance trends and the maximum thermal performance at the static optimal slope angle.
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The Fluid Flow Effect on the Inlet Injection of the Thin Film Deposition in a Square Type Atomic Layer Deposition Reactor
TL;DR: In this article, the inlet flow effect, near substrate flow behavior, and optimal selection for the deposition of aluminium oxide (Al2O3) thin film were investigated in a square type Gemstar Reactor.