There is disclosed herein an integrated scanning tunneling microscope and an integrated piezoelectric transducer and methods for making both. The device consists of one or two arm piezoelectric bimorph cantilevers (42, 46) formed by micromachining using standard integrated circuit processing steps. These cantilevers are attached to the substrate (32) at one area (80) and are free to move under the influence of piezoelectric forces which are caused by the application of appropriate voltages generated by control circuitry (88) and applied to pairs of electrodes (48, 36, 44; 52, 49, 44) formed as an integral part of the bimorph cantilever structure. The electric fields caused by the control voltages cause the piezoelectric bimorphs to move in any desired fashion within ranges determined by the design. The bimorph cantilevers have tips (66) with very sharp points formed thereon which are moved by the action of the control circuit (88) and the piezoelectric bimorphs so to stay within a very small distance of a conducting surface (84). The movements of the tip can be tracked to yield an image of the surface at atomic resolution.

Integrated scanning tunneling microscope

First and second electrically insulating substrates are joined with each other at respective joining faces thereof. Each of the first and second insulating substrates has an annular groove at the joining face, and a plurality of through holes along outer and inner peripheries of the annular groove. An annular core is mounted in the annular groove. A cylindrical connection is formed in each through hole, and a radial connection is formed on an outer surface of each insulating substrate so as to connect opposite cylindrical connections. A toroidal coil is formed by serially connecting cylindrical connections and radial connections. An IC chip is mounted on the outer surface of the first insulating substrate, and connected to the toroidal coil and electronic part. The toroidal coil and the electronic part are coated with an electrically insulating material.

Modular surface mount circuit device and a manufacturing method thereof

A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics is suitable for use in a wide variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave modes. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, applied along at least a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.

Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials

An electromagnetically-shielded high-Q inductor may be fabricated within a multi-layer package substrate (MLS). The inductor is preferably constructed as a loop structure on a layer of the MLS, and a shielding structure is formed around the inductor to substantially enclose the inductor in a Faraday cage-like enclosure. The shielding structure includes a top plate formed above the inductor on another layer of the MLS, and a bottom plate formed on yet another layer of the MLS or on a layer of an integrated circuit die which is below and attached to the MLS, preferably using solder bumps. Shielding structure sidewalls may be formed by a ring of stacked vias or via channels. The inductor is preferably connected to stacked vias which provide a connection to the underlying integrated circuit die by way of additional solder bumps and cut-outs through the bottom plate of the shielding structure.

Integrated circuit package configuration incorporating shielded circuit element structure

A single chip receiver/transmitter section (202) includes an antenna switch (208), a low noise amplifier (210), a power amplifier (212) and a first (214) and second (216) mixers. The antenna switch (206)includes an antenna terminal (256) which is coupled to an off-chip band pass filter (206) which provides all of the selectivity for radio (200). Also described is a transmitter/receiver structure (300) which incorporates a transmission line filter such as band pass filter (206) formed by substrates (304) and (306) and includes the single chip transmitter/receiver section (202) imbedded inside of the structure (300).

Integrated radio receiver/transmitter structure

An inductor structure, that houses a shorted transmission line inductor, includes components mounted within the volume carrying the shorted transmission line. Dielectric substrate layers which carry the shorted transmission line components and the electronic devices when sandwiched together can be coated with a metallic layer that acts as a shield protecting the internal components from external undesired sources. Mounting components within the inductor volume potentially saves space on a circuit board.

Inductor structure with integral components

A piezoelectric monolithic crystal filter operating in the trapped energy mode and having a capacitor plated on the piezoelectric wafer within energy coupling distance of the main electrodes has its output response improved by trapping wave energy, at the frequencies of the main electrodes, engendered by the capacitor and conducting such energy to the edges of the piezoelectric wafer where it is dissipated. Such energy is therefore not coupled into the filter structure and does not appear as an undesirable response.

Robert A. Kellen

Papers

Inductor structure with integral components

Piezoelectric monolithic crystal element having improved response