A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (40) on the seed layer (20;20').

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

A method for substantially reducing the range in daily dosages required to control pain in approximately 90% of patients is disclosed whereby an oral solid controlled release dosage formulation having from about 10 to about 40 mg of oxycodone or a salt thereof is administered to a patient. The formulation provides a mean maximum plasma concentration of oxycodone from about 6 to about 60 ng/ml from a mean of about 2 to about 4.5 hours after administration, and a mean minimum plasma concentration from about 3 to about 30 ng/ml from about 10 to about 14 hours after repeated “q12h” (i.e., every 12 hour) administration through steady-state conditions. Another embodiment is directed to a method for substantially reducing the range in daily dosages required to control pain in substantially all patients by administering an oral solid controlled release dosage formulation comprising up to about 160 mg of oxycodone or a salt thereof, such that a mean maximum plasma concentration of oxycodone up to about 240 ng/ml from a mean of up to about 2 to about 4.5 hours after administration, and a mean minimum plasma concentration up to about 120 ng/ml from about 10 to about 14 hours after repeated “q12h” (i.e., every 12 hour) administration through steady-state conditions are achieved. Controlled release oxycodone formulations for achieving the above are also disclosed.

Controlled release oxycodone compositions

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.

Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating

A laser diode package includes a heat sink, a laser diode, and an electrically nonconductive (i.e. insulative) substrate. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode further has first and second side surfaces between the emitting and reflective surfaces. The heat sink has an upper surface and a lower surface. The first side surface of the laser diode is attached to the heat sink adjacent to the upper surface. The substrate is attached to the lower surface of the heat sink. The heat sink is made of heat conducting metal such as copper and the substrate is preferably made from gallium arsenide. The substrate is soldered to the heat sink as is the laser diode bar. Due to the presence of the substrate at the lower end of the heat sink, each individual laser diode package has its own electrical isolation. Several packages can be easily attached together to form a laser diode array.

Laser diode packaging

The low voltage operation of this electro-optic modulator is realized by a unique system configuration in which the input light beam is first separated into two linearly polarized components of equal intensity, the beams are then focused into two crystals where the beams propagate as pure E waves, the crystals are electrically modulated and the output beams from each crystal are then recombined and recollimated. The low voltage operation is rendered possible by the fact that there is no cancellation between the E and O components as in conventional modulation systems of this type since both beams are transmitted as pure E waves during the modulation process.

Low voltage electro-optic modulator

A laser diode is soldered between metal plates for intimate thermal and electrical contact. The plates are prefabricated and are provided with an insulative spacer therebetween. The two metal plates are held together in a preferred orientation by the spacer which is firmly adhered and sealed to the two plates during the diode soldering operation. The metal plates are constructed from material thin enough that they yield under thermal pressure of the diode to eliminate mechanical strain on the diode during thermal cycling. Backup plates are provided in contact with the diode mounting plates to feed electrical energy thereto.

Robert A. Stacy

Papers

Low voltage electro-optic modulator

Laser diode with double sided heat sink