An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy

A system and method for determining the temperature of a semiconductor wafer at the time of thermal contact of the semiconductor wafer with a temperature sensing element. According to the invention, a temperature profile of the temperature sensing element is recorded from the time of thermal contact up to the time of thermal equilibrium between the semiconductor wafer and the temperature sensing element and the temperature of the semiconductor wafer at the time of thermal contact is determined on the basis of a time period between the time of thermal contact and the time of thermal equilibrium and the temperature T G of the semiconductor wafer reached at the time t G of thermal equilibrium is determined by back calculation with the aid of an equation derived from Newton's law of cooling.

System and method for determining the temperature of a semiconductor wafer

Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.

Systems and methods for epitaxially depositing films on a semiconductor substrate

A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.

System and process for calibrating pyrometers in thermal processing chambers

Heating configuration for use in thermal processing chambers

The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sensing and measuring the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object, which causes thermal radiation being emitted by the wafer to be reflected multiple times. The reflected thermal radiation is then monitored using a light detector. Additionally, a reflectometer is contained within the system which independently measures the reflectivity of the object. The temperature of the object is then calculated using not only the thermal radiation information but also the information received from the reflectometer.

Apparatus and method for determining the temperature of objects in thermal processing chambers

The present invention is generally directed to a
system and process for accurately determining the
temperature of an object, such as a semiconductive
wafer, by sensing and measuring the object radiation
being emitted at a particular wavelength. In
particular, a reflective device is placed adjacent to
the radiating object, which causes thermal radiation
being emitted by the wafer to be reflected multiple
times. The reflected thermal radiation is then
monitored using a light detector. Additionally, a
reflectometer is contained within the system which
independently measures the reflectivity of the object.
The temperature of the object is then calculated using
not only the thermal radiation information but also
the information received from the reflectometer.

Apparatus and method for determining the temperature of an object in thermal processing chambers

PROBLEM TO BE SOLVED: To accurately measure a temperature of a radiator by conquering inconvenience in constitution and a method of a conventional technique and by detecting compoundedly heat radiation energy radiated from an object in a specified wave length without contacting with the radiator, to determine the temperature by reflecting the heat radiation energy radiated from the object, and then to measure the reflected radiation energy. SOLUTION: This is a system and a method for determining accurately a temperature of an object such as a semiconductor wafer 14 by detecting and measuring radiation energy of the object radiated in a specified wave length. A reflection device 26 is arranged in particular neighbouring on a radiator to reflect heat radiation energy radiated from the wafer 14 plural times. The reflected heat radiation energy is measured using a photodetector 30. A reflection meter 40 is provided inside a system for measuring independently a refrectance of the object. The temperature of the object is calculated using not only the heat radiation energy but also information received from the reflection meter 40.

Robert J. Champetier

Papers

Apparatus and method for determining the temperature of objects in thermal processing chambers

Apparatus and method for determining the temperature of an object in thermal processing chambers

Device and method for determining temperature of object in heat-treatment chamber