An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H3Si)3-xMRx, (H3Si)3N, and (H3Si)4N2, wherein R is H or D, x = 0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.

Dopant precursors and processes

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

In order to reduce the rate of coke formation during the industrial pyrolysis of hydrocarbons, the interior surface of a reactor is coated with a thin layer of a ceramic material, the layer being deposited by thermal decomposition of a non-oxygen containing silicon-nitrogen precursor in the vapor phase, in an inert or reducing gas atmosphere in order to minimize the formation of oxide ceramics.

CVD of silicon-based ceramic materials on internal surface of a reactor

In order to reduce the rate of coke formation during the industrial pyrolysis of hydrocarbons, the interior surface of a reactor is coated with a uniform layer of a ceramic material, the layer being deposited by thermal decomposition of a non-alkoxylated organosilicon precursor in the vapor phase, in a steam containing gas atmosphere in order to form oxide ceramics.

Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors

Compounds useful as chemical precursors in chemical vapor deposition of silicon-based ceramic materials

of EP0654544Process for protecting from coking the inner surface of a chemical reactor comprises decomposing a precursor cpd. (I) in the vapour phase inside the reactor, in an inert or reducing gas atmos. to form a thin layer of a ceramic material on the inner surface of the chemical reactor. The improvement is that (I) contains N, C and H and at least 2 Si, which are bonded to a single N, with the proviso that when (I) contains only 2 or 3 Si bonded to a single N, then (I) is selected from cpds. contg. at least one alkyl group bonded to a Si, the alkyl group having at least 2 C, and nonamethyl-trisilazane. Also claimed are cpds. of formula (IV)-(VII) R6 = H or 1-20C alkyl; R7 = H, Li or SiR8R9R10; R8-R12 = H or 1-20C alkyl; R = H, 1-20C alkyl or NR1R2; R1, R2 = H, 1-20C alkyl, halo or SiR3R4R5; R3-R5 = H, 1-20C alkyl or NR1R2; A = divalent alkylene, arylene or alkylarylene. (I) is e.g. heptamethylchlorotrisilazane or 1,3-dichloro-1,1,3,3-tetramethyl disilazane

Process for lining a chemical reactor with silicon-based ceramic materials by thermal decomposition of silazane precursors

of EP0671483Passivating the surface of a chemical reactor subject to coking comprises decomposing an organosilicon precursor cpd. in the vapour phase inside the reactor, in an atmos. of a steam-contg. carrier gas, to form a thin layer of a ceramic material on the surface of the chemical reactor. The precursor is an organosilicon cpd. that does not contain an alkoxy gp.. Also claimed are: (1) a passivation process as above using a precursor of formula (II); (2) the above process using a precursor of formula (III); and (3) the above process using a precursor of formula (IV).

Robert Mininni

Papers

CVD of silicon-based ceramic materials on internal surface of a reactor

Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors

Compounds useful as chemical precursors in chemical vapor deposition of silicon-based ceramic materials

Process for lining a chemical reactor with silicon-based ceramic materials by thermal decomposition of silazane precursors

Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors