A silicon-on-insulator trench isolation structure is disclosed that includes an active silicon-on-insulator region, an active bulk substrate region, and a trench region positioned between the active silicon-on-insulator region and the active bulk substrate region. The active silicon-on-insulator region is provided with a silicon-on-insulator film (42) positioned above a buried insulator layer (32). The active bulk substrate region may be provided between two trench regions such as a trench region (20) and a trench region (22). The trench region (20) is positioned between the active silicon-on-insulator region and the active bulk substrate region.

Silicon-on-insulation trench isolation structure and method for forming

In the manufacture of semiconductor components, more radiation tolerant semiconductors are accomplished by growing a uniform epitaxial collector region on a dielectrically isolated substrate having islands of high conductivity semiconductor material.

Integrated circuit process

A dielectrically isolated island architecture in which the island is contoured inwardly to form one or more projections that penetrate a well separating two regions in the island to assure that the two regions will be electrically isolated without additional processing steps.

Roder M

Papers

Fabrication of integrated microcircuits utilizing dielectric p-n-junction isolation