Printed circuit board

The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta 2 O 5 , a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700° C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.

Processes for making a barrier between a dielectric and a conductor and products produced therefrom

An antenna assembly includes: an antenna including: a metal signal layer having a radiating surface; and a feed port; and a waveguide surrounding the antenna and configured to guide electromagnetic energy transmitted from the radiating surface in a direction away from the antenna; and a controller module connected to the feed port and configured to drive the antenna to transmit electromagnetic energy from the radiating surface; wherein the antenna, waveguide, and controller module are configured such that, when the controller module drives the antenna, the transmitted electromagnetic energy matches a reception characteristic of an implantable device and is sufficient for the implantable device to create one or more electrical pulses of sufficient amplitude to stimulate neural tissue of a patient, solely using electromagnetic energy received from the antenna, when the implantable device is located at least 10 centimeters away from the antenna.

Remote rf power system with low profile transmitting antenna

A semiconductor element, wherein copper transition layers (38) disposed on die pads (22) of an IC chip (20) are incorporated in a multi-layer printed circuit board (10), whereby the IC chip (20) can be connected electrically to the multi-layer printed circuit board (10) without using lead parts and sealing resin, the resin is prevented from remaining on an aluminum pad (24) by providing the copper transition layers (38) on the aluminum pad (24), and the connectability between the die pads (22) and via holes (60) and the reliability thereof can be increased.

Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board

The present invention includes methods for making liquid crystalline polymer (LCP) interconnect structures using a high temperature and low temperature single sided LCP, where both the high and low temperature LCP are provided with a z-axis connection. The single sided conductive layer is a bus layer to form z-axis conductive stud within the high and low temperature LCP. High and low temperature LCP layers are etched or built up to form circuit patterns and subsequently bonded together to form final multilayer circuit pattern where the low temperature LCP melts to form both dielectric to dielectric bond to high temperature LCP circuit layer, and dielectric to conductive bond.

Methods for fabricating three-dimensional all organic interconnect structures

The specification describes of multilevel printed circuit boards and a process for their manufacture in which capacitors and other passive components are buried between levels of the multilevel board. The capacitor in the multilevel structure is designed so that access is conveniently provided to connect from the parallel plate electrodes of the interlevel capacitor to the board surface or to another board level using plated through hole interconnects.

Embedded thin film passive components

The specification describes a phase shifting microstrip device in which the ground plane electrode is formed on a substrate surface and a film of ferroelectric material with a thickness less than 200 μm is formed over the ground plane electrode The microstrip electrode is formed over the film of ferroelectric material to produce a microstrip device with an operating voltage of less than 200 volts

Microstrip phase shifters

Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (>40 at 20° C.) and relatively low second order voltage coefficient a 2 of the dielectric constant (a 2 <100 PPM V 2 at 20° C.). In preferred embodiments the dielectric material has nominal composition (BA x Sr y Ti 1--x--y )-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.

Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film

The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO2 doping. Specifically, applicants have discovered sputtering Ta2 O5 in an oxygen-rich ambient at a temperature in excess of 450° C. and preferably in excess of 550° C., produces a new crystalline phase thin film having enhanced dielectric properties.

Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers

PROBLEM TO BE SOLVED: To simply incorporate a passive type device between printed circuit board layers of multi-layer structure, by embedding a capacitor between a first printed circuit board layer and a second printed circuit board layer for mutual connection of a through hole. SOLUTION: Related to a mutual connection structure to an embedded layer, a through hole 24 is formed by a standard dilling technology and the through hole 24 is plated with a metal 25 such as copper. With the function of an electrode 19 of a capacitor electrode 18 together with the fact that an Al layer does not entirely cover a capacitor dielectrics layer, the importance of an exposed dielectrics part 22 being left over is clear. A surface mutual connection structure 26 contacts a tantalum layer 12 which is a lower side plate of the capacitor, a surface mutual connection structure 27 contacts an electrode extension part 19 of the capacitor electrode 18 of the capacitor, and a surface mutual connection structure 28 and a surface mutual connection structure 29 contact an inductor spiral strip 21. Thus, the through hole is allowed to mutually connect two electrodes embedded in the capacitor.

Roderick Kent Watts

Papers

Embedded thin film passive components

Microstrip phase shifters

Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film

Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers

Laminated structure body of printed circuit board