R
Ron Rulkens
Publications - 9
Citations - 647
Ron Rulkens is an academic researcher. The author has contributed to research in topics: Dielectric & Chemical vapor deposition. The author has an hindex of 9, co-authored 9 publications receiving 647 citations.
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Patent
Sequential deposition/anneal film densification method
Raihan M. Tarafdar,George D. Papasouliotis,Ron Rulkens,Dennis M. Hausmann,Jeff Tobin,Adrianne K. Tipton,Bunsen Nie +6 more
TL;DR: In this paper, a silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique, and the layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film.
Patent
Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
George D. Papasouliotis,Raihan M. Tarafdar,Ron Rulkens,Dennis M. Hausmann,Jeff Tobin,Adrianne K. Tipton,Bunsen Nie +6 more
TL;DR: In this article, an atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface, which is then annealed using a high density plasma (HDP) at a temperature under 500°C.
Patent
Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer
Dennis M. Hausmann,Jeff Tobin,George D. Papasouliotis,Ron Rulkens,Raihan M. Tarafdar,Adrianne K. Tipton,Bunsen Nie +6 more
TL;DR: In this paper, an atomic layer deposition (ALD) and rapid vapor deposition (RVD) technique conformally deposits a dielectric material on small features of a substrate surface.
Patent
Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films
Ron Rulkens,Dennis M. Hausmann,Raihan M. Tarafdar,George D. Papasouliotis,Bunsen Nie,Adrianne K. Tipton,Jeff Tobin +6 more
TL;DR: In this paper, a method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface, resulting in a thinner, faster growing, and better gap fill performance compared to films resulting from silicon precursors with identical alkoxy substituents.
Patent
Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry
George D. Papasouliotis,Raihan M. Tarafdar,Adrianne K. Tipton,Ron Rulkens,Dennis M. Hausmann,Jeff Tobin +5 more
TL;DR: In this article, the authors describe methods of forming conformal films with increased density, which may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids.