A process module wherein radiant heating is combined with the capability for generating a plasma in proximity to the wafer face. It is useful to clamp the slice to a susceptor which is of the same material as the wafer, or at least has essentially the same thermal coefficient of expansion. The susceptor is directly heated by a radiant heater, but the rate of temperature change is slow enough that no large thermal gradients between the susceptor and the wafer develop.

Processing apparatus and method

In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.

Integrated module multi-chamber CVD processing system and its method for processing substrates

A chemical vapor deposition reactor (59) including a wafer (60) boat (77) with a vertical stack of horizontally oriented susceptors (62) serving as thermal plates (76) and each having pins (228) extending upward for suspending a wafer (60) between a pair of susceptors (62). Reactant gas injector (65) and exhaust apparatus (272) are positioned to concentrate a forceful supply of reactant gas across each wafer (60) at a speed in excess of 10 cm/sec. The pressure is held in the range of 0.1 to 5,000 mTorr. The forceful gas flow avoids gas depletion effects, thinning the boundary layer and resulting in faster delivery of reactants to substrate surfaces, resulting in surface rate reaction limited operation. A plurality of individually controllable heaters (78) are spaced vertically around the sides of the boat (77). Temperature sensors (130) monitor the temperature along the boat (77) height and provide input to a controller (118) for adjusting the heater drive to optimize the temperature uniformity.

High rate deposition at low pressures in a small batch reactor

A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer by layer growth on a wafer. A first reactant is introduced with a percentage of a carrier gas. After a first time interval, the first reactant flow is reduced while the carrier gas flow is increased so as to maintain an approximately constant total gas flow. When the first reactant flow reaches a minimal, predetermined amount, a second reactant flow is initiated and increased while the carrier gas flow is decreased so as to continue a constant total gas flow. The method alternatively includes introducing a substance that enhances reactant adsorption and chemisorption, either as a first applied gas that reacts with the surface or as an added ligand to the reactant. Still further alternatives include a periodic rapid thermo anneal for improving film properties, parallel wafer processing and a reactant reservoir.

Method and apparatus for layer by layer deposition of thin films

A process module having remote plasma and in situ plasma generators, and a radiant heater, which represent three separate energy sources. The three sources can be used singly or in any combination and can be separately controllable.

Method for cleanup processing chamber and vacuum process module

Adherent deposits of tungsten are formed on receiving surfaces by preparing the receiving surface and thereafter forming a thin deposit of polycrystalline silicon on the surface The surface and the deposited polycrystalline silicon is then exposed to a hydrogen containing tungsten fluoride gas at a suitable temperature to induce the adherent growth of tungsten film on the surface by reaction of the silicon with the tungsten fluoride gas It is possible to form the polycrystalline silicon in a pattern on the surface and to form the tungsten deposit in the pattern in which the polycrystalline silicon had been deposited

Method for nucleating and growing tungsten films

An apparatus is provided for selectively depositing metal films on metal and semiconductive surfaces of a substrate wherein the depositing surface of the substrate is isolated from undesired impinging radiation, such as infrared radiation.

Selective chemical vapor deposition apparatus

A method is provided for selectively depositing tungsten metal at thicknesses over 1000 angstroms or more on silicon and other conductor and semiconductor surfaces, wherein a substrate containing such surfaces is exposed to a chlorine or bromine containing solution to prevent deposition of tungsten on the insulator surfaces.

Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces

A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.

Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces

A protective beryllium oxide coating of suitable thickness is applied to the inner surface of the arc tube of a high-intensity, metal halide discharge lamp in order to avoid a substantial loss of the metallic portion of the metal halide fill and hence a substantial buildup of free halogen, thereby extending the useful life of the lamp. A preferred lamp structure includes a fused silica arc tube. The beryllium oxide coating is preferably applied to the arc tube by evaporating beryllium in the arc tube under non-oxidizing conditions, and then heating in an oxidizing atmosphere.

Ronald H. Wilson

Papers

Method for nucleating and growing tungsten films

Selective chemical vapor deposition apparatus

Enhancing the selectivity of tungsten deposition on conductor and semiconductor surfaces

Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces

Protective beryllium oxide coating for high-intensity discharge lamps