An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Palladium Complexes with Tridentate Pincer Bis-Carbene Ligands as Efficient Catalysts for C−C Coupling

A coating composition which imparts anti-reflective and anti-fog properties to substrates coated therewith. The coating composition utilizes an inorganic metal oxide in combination with silane or a siloxane oligomer. The coating compositions are particularly useful in the manufacture of disposable surgical masks and face shields.

Coating composition having anti-reflective and anti-fogging properties

Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50%. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the UV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.

Ultraviolet curing processes for advanced low-k materials

Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically less than about 475° C., and the annealing time is typically no more than about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

Plasma curing process for porous silica thin film

Pre-polymers which are alkoxylated or phenoxylated methylpolysilanes are useful for the preparation of fine grained silicon carbide ceramic materials and silicon carbide-containing ceramics. The pre-polymers exhibit ease of handling and their use to obtain silicon carbide ceramic materials results in high yields.

High yield silicon carbide pre-ceramic polymers

A pigment-free coating composition comprising an acidic dispersion of colloidal titania, colloidal silica and hydroxylated silsesquioxane in an alcohol-water medium. A coating of the composition cured on a plastic substrate such as polycarbonate results in a hard, abrasion-resistant protective coating. Such coatings transmit visible light, but absorb wavelengths of ultraviolet light which cause degradation of the substrate surface and resultant adhesion-loss of the protective coating upon weathering. A cured coating of these compositions deposited on metal substrates such as aluminum results in a hard, abrasion resistant coating which offers slightly more corrosion protection than such a composition without colloidal titania.

Pigment-free coatings with improved resistance to weathering

Methylchloropolysilanes and derivatives prepared from the redistribution of methylchlorodisilanes

What is disclosed is an improved method of preparing silicon carbide which is characterized by the preparation of a specific pre-silicon carbide polymer. The method allows the preparation of silicon carbide from specific polysilane polymers without the cumbersome extractions and purifications found in the newer methods of silicon carbide preparation.

Method for preparing silicon carbide

This invention relates to a low temperature method of converting coatings of hydrogen silsesquioxane resin or hydrolyzed or partially hydrolyzed R X Si(OR) 4-X to ceramic silica coatings. The method comprises applying a silica precursor coating to a substrate, exposing the coating to an environment comprising an amine and subjecting the coating to a temperature sufficient to yield the ceramic coating. The methods of the invention are particularly applicable to applying coatings on electronic devices.

Ronald Howard Baney

Papers

High yield silicon carbide pre-ceramic polymers

Pigment-free coatings with improved resistance to weathering

Methylchloropolysilanes and derivatives prepared from the redistribution of methylchlorodisilanes

Method for preparing silicon carbide

Amine catalysts for the low temperature conversion of silica precursors to silica