Preface. Introduction, Fundamental Concepts, and Definitions. Solid-State Device Modeling. Harmonic-Balance analysis. Volterra-Series and Power-Series Analysis. Balanced Circuits. Diode Mixers. Diode Frequency Multipliers. Small-Signal Amplifiers. Power Amplifiers. Active Frequency Multipliers. Active Mixers. Oscillators. Index.

Nonlinear Microwave and RF Circuits

This paper presents a comprehensive study of intermodulation-distortion response asymmetries often observed in microwave nonlinear systems subject to a two-tone or multitone test. The reasons for the different amplitudes of the two adjacent tones are first investigated under small- and large-signal regimes, using a general circuit with frequency-dependent embedding impedances and resistive and reactive nonlinearities. It is shown that this intriguing phenomenon can be mainly attributed to the terminating impedances at the baseband or difference frequencies. Multitone behavior is also addressed and its main differences from the two-tone case explained. Those theoretical conclusions are then extrapolated for real circuits and validated by measured results obtained from microwave power amplifiers of two different technologies, i.e., a GaAs MESFET and an Si bipolar junction transistor.

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A comprehensive explanation of distortion sideband asymmetries

Power amplifier (PA) is an essential component in communication systems and is nonlinear in nature. Digital baseband predistortion is an emerging cost effective approach to linearize a PA. To study PA nonlinear characteristics and to construct a predistorter, accurate nonlinear models are often necessary. Polynomials have been used extensively for modeling the behavior of the PA or the predistorter. For bandpass communication signals, attention has been paid mainly to odd-order nonlinear terms. In this paper, we reveal the benefit of including even-order nonlinear terms in baseband modeling of the PA and in enhancing predistortion performance.

Effects of even-order nonlinear terms on power amplifier modeling and predistortion linearization

The intermodulation performance of an FET in the common-source configuration is dependent on the impedance presented to its gate and drain terminals, not only at fundamental, but also at harmonic and baseband frequencies. At baseband frequencies, these terminating impedances are usually determined by the bias networks, which may have varying impedance over the frequencies involved. This can give rise to asymmetry in two-tone intermodulation levels, and changing intermodulation levels with tone spacing, as previous studies have shown. In this paper, an FET is analyzed to gain an understanding, useful to the circuit designer, of the contributing mechanisms, and to enable the prediction of bias points and the design of networks that can minimize or maximize these effects. Compact formulas are given to facilitate this. An amplifier was tested, showing good agreement between the theoretical and measured results.

Effect of baseband impedance on FET intermodulation

Covers theoretical and practical aspects related to the behavioral modelling and predistortion of wireless transmitters and power amplifiers. It includes simulation software that enables the users to apply the theory presented in the book. In the first section, the reader is given the general background of nonlinear dynamic systems along with their behavioral modelling from all its aspects. In the second part, a comprehensive compilation of behavioral models formulations and structures is provided including memory polynomial based models, box oriented models such as Hammerstein-based and Wiener-based models, and neural networks-based models. The book will be a valuable resource for design engineers, industrial engineers, applications engineers, postgraduate students, and researchers working on power amplifiers modelling, linearization, and design.

Behavioral Modeling and Predistortion of Wideband Wireless Transmitters: Ghannouchi/Behavioral Modeling and Predistortion of Wideband Wireless Transmitters

The author presents an analysis of the broadening of the bandwidth of narrowband modulated signals, commonly called spectral regrowth, caused by weak nonlinearities. The analysis uses Volterra methods and operates entirely in the frequency domain. It is applicable to signals having either discrete or continuous spectra.

Volterra analysis of spectral regrowth

The relation for intermodulation distortion (IM) levels in cascaded stages is based on the worst-case assumption that intermodulation products at the output of each stage combine in phase. However, because there is no apparent reason why IM products should always combine in phase, efforts are customarily made to discard this assumption. Using Volterra analysis, we show that, in certain cases, the IM products do indeed combine in phase, and the cascade relation gives an accurate, not worst-case, prediction of distortion. >

S.A. Maas

Papers

Volterra analysis of spectral regrowth

Third-order intermodulation distortion in cascaded stages