Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

https://hal.archives-ouvertes.fr/hal-03024884/document

Displacement Talbot lithography for nano-engineering of III-nitride materials.

Surface grating couplers are diffractive periodic structures that enable efficient coupling of light between optical fibers and planar waveguides. Conventional grating couplers have polarization specific and limited wavelength operation, because of the intrinsic radiation angle dependency on both wavelength and polarization. In this Letter, we propose, to the best of our knowledge, the first polarization-independent surface fiber-chip grating coupler, behaving as a wavelength splitter for the O and C communication bands. Polarization insensitivity is achieved by subwavelength segmentation of the silicon gratings, together with a novel design to allow the dual wavelengths to propagate along two opposite directions in the chip. For the TE and TM polarizations, coupling efficiencies around −4.5 dB are achieved at both 1310 nm and 1550 nm, with an average 1-dB bandwidth of ~45 nm and ~60 nm, respectively. This grating coupler concept can be used as a part of transceivers to increase the data rate of wavelength-division-multiplexing (WDM) systems for fiber-to-the-home (FTTH) network services.

Dual-Band Polarization-Independent Subwavelength Grating Coupler for Wavelength Demultiplexing

We report on the experimental and theoretical study of the near-field diffraction of optical vortices (OVs) at a two-dimensional diffraction grating. The Talbot effect for the optical vortices in the visible range is experimentally observed and the respective Talbot carpets for the optical vortices are experimentally obtained for the first time. It is shown that the spatial configuration of the light field behind the grating represents a complex three-dimensional lattice of beamlet-like optical vortices. A unit cell of the OV lattice is reconstructed using the experimental data and the spatial evolution of the beamlet intensity and phase singularities of the optical vortices is demonstrated. In addition, the self-healing effect for the optical vortices, which consists in flattening of the central dip in the annular intensity distribution, i.e., restoring the image of the object plane predicted earlier is observed. The calculated results agree well with the experimental ones. The results obtained can be used to create and optimize the 3D OV lattices for a wide range of application areas.

/pdf/two-dimensional-talbot-effect-of-the-optical-vortices-and-28f1f9qqvq.pdf

Two-dimensional Talbot effect of the optical vortices and their spatial evolution

https://iopscience.iop.org/article/10.1088/2040-8986/ab5b7d/pdf

Self-images contrast enhancement for displacement Talbot lithography by means of composite mesoscale amplitude-phase masks

We describe a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. In this way, we can create different periodic patterns in short timescales using a single mask with no mask degradation. We demonstrate multiple exposures, combined with discrete lateral displacements, and single exposures, with continuous displacements, to achieve image inversion, pitch reduction, and nanogaps between metal nanoparticles. Our approach provides a flexible route to create large-area nanopatterned materials and devices in high volumes.

“Double” displacement Talbot lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns

Displacement Talbot lithography (DTL) is a new technique for patterning large areas with sub-micron periodic features with low cost. It has applications in fields that cannot justify the cost of deep-UV photolithography, such as plasmonics, photonic crystals, and metamaterials and competes with techniques, such as nanoimprint and laser interference lithography. It is based on the interference of coherent light through a periodically patterned photomask. However, the factors affecting the technique’s resolution limit are unknown. Through computer simulations, we show the mask parameter’s impact on the features’ size that can be achieved and describe the separate figures of merit that should be optimized for successful patterning. Both amplitude and phase masks are considered for hexagonal and square arrays of mask openings. For large pitches, amplitude masks are shown to give the best resolution; whereas, for small pitches, phase masks are superior because the required exposure time is shorter. We also show how small changes in the mask pitch can dramatically affect the resolution achievable. As a result, this study provides important information for choosing new masks for DTL for targeted applications.

S. D. Lis

Papers

Understanding resolution limit of displacement Talbot lithography.