Electrical transport analysis of ultra-pure silicon

: The Si:Ga system is modeled for detection of infrared (IR) radiation in low backgrounds. The responsivity and detectivity are calculated as functions of residual B, compensation ratio, and temperature. The results demonstrate a large potential for improvement in device performance if starting material with a low residual B is used to manufacture the detectors. These improvements include higher responsivity, higher operating temperature, increased detectivity, greater uniformity in spatial response, and increased radiation hardness.

S. McGuigan

Papers

A model of the performance characteristics of silicon-gallium infrared detectors for low background applications