Elements Of X Ray Diffraction

Transparent conducting oxides for electrode applications in light emitting and absorbing devices

Tribology of electroless nickel coatings – A review

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

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Metal oxide semiconductor thin-film transistors for flexible electronics

The features of conductometric gas sensors based on metal oxide composites are considered. The methods of the composites forming and the advantages of their using in the development of gas sensors are discussed. It is given the analysis of the factors that reduce the effectiveness of the composite using in conductometric gas sensors and can restrict application of nanocomposites in these devices. Technology features of composite synthesis and device fabrication, which should be taken into account while designing and fabricating sensors based on metal oxide composites, are considered. The mechanisms explaining the operation of conductometric gas sensors based on metal oxide composites are also discussed.

Metal oxide composites in conductometric gas sensors: Achievements and challenges

Electroless Ni–P coatings provide high hardness and excellent resistance to wear and abrasion The present work aims to study the formation of electroless Ni–P graded coatings, with varying nickel and phosphorus contents of the individual layers and to evaluate their corrosion resistance by polarization and electrochemical impedance spectroscopic studies The possibility of preparing electroless Ni–P graded coatings by sequential immersion in three different plating baths is discussed The study reveals that electroless Ni–P graded coatings offer better corrosion resistance than non-graded Ni–P coatings

Deposition of electroless Ni–P graded coatings and evaluation of their corrosion resistance

In this review, we discuss the recent developments of high-performance and improved-stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin-film transistors (TFTs) properties. TAOSs are widely explored with the aim of producing high-performance semiconductors suitable for the channel layer of TFTs which enable to survive under light and thermal-bias-induced stress conditions. Numerous TAOSs have been invented with some improved performance characteristics of TFTs such as mobility, light and thermal induced bias stress. However, there has been no clear elucidation of the mechanisms driving these improvements. In this review, we discuss the progression of innovations of high performance indium-oxide-based TAOS TFTs from its first reported amorphous indium gallium zinc oxide (a-IGZO) to present, and their properties that are correlated with the Lewis acid strength (L) and bonding strength of dopant and oxygen as a carrier suppressor and strong binder. The proposed mechanism can be practical to develop novel TAOS TFTs with high mobility and stability.

S. Parthiban

Papers

Deposition of electroless Ni–P graded coatings and evaluation of their corrosion resistance

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications

Investigations on high visible to near infrared transparent and high mobility Mo doped In2O3 thin films prepared by spray pyrolysis technique

Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis