The dynamics of the piezo inkjet printhead operation

Internal strain amplification can be utilized in piezoelectric ceramics to obtain relatively large displacements. The monomorph described in the present work is a bending bar made from a single piece of material into which a smooth gradient of piezoelectric activity is introduced. The application of a voltage then causes the bar to bend due to the differential stresses that are induced. These are relatively uniformly distributed and do not peak in the center as in a conventional bimorph. Significantly increased life and reliability can then be achieved.

Piezoelectric Ceramics with Functional Gradients: A New Application in Material Design

Materials issues in design and performance of piezoelectric actuators: an overview

A ferroelectric dielectric for microwave applications is provided including a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapour, preferably with the addition of a few percent of ozone, and at a temperature of less than 500° C. Advantageously, the method provides for formation of a ferroelectric material including lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.

Ferroelectric dielectric for integrated circuit applications at microwave frequencies

Analysis of out-of-plane displacement and stress field in a piezocomposite plate with functionally graded microstructure

A new type of bending actuator, "monomorph", is proposed by using a single plate of semiconductive piezoelectric ceramics. The principle of bending originates from the nonuniform distribution of the electric field in a single plate caused by the semiconductor–metal electrode contact. Monomorph characteristics are exemplified in lead zirconate based and barium titanate ceramics. A bend curvature comparable to that of conventional piezoelectric "bimorphs" can be obtained.

Monomorph actuators using semiconductive ferroelectrics

A New actuator device is proposed using semiconductive ferroelectric ceramics. This device is a single-plate actuator capable of bending equivalently to a bimorph. A significant difference is simple structure named as a “monomorph” as compared with a multi-stacked type in the bimorph. The bend in the monomorph device is realized by non-uniform electric field distribution in the piezoelectric ceramics, through the semiconductor-metal contact effect (Schottky barrier). The monomorph has been demonstrated in the solid solutions PbZrO3-(K1/2Bi1/2)ZrO3 and BaTiO3-Dy2O3. Both systems reveal the tip deflectionof several hundred micrometers in a 0.5mm thick plate.

https://www.jstage.jst.go.jp/article/jcersj1950/95/1103/95_1103_722/_pdf

New monolithic actuators, 'monomorphs', using semiconductive ferroelectrics.

PURPOSE:To improve the capacitance of a thin film capacitor while the thickness of the capacitor is reduced so as to improve the temperature and frequency characteristics of its dielectric constant by applying the solution of an organometallic compound of MgTiO3 which becomes dielectric to a conductive film after the conductive film is heat-treated, and heat-treating the applied solution. CONSTITUTION:A conductive film obtained by forming a single layer of a metallic film of Pt, Au, Ni, Cr, etc., or piling up metallic films of one of these metals on a conductive substrate 3 of Si, etc., or an insulating substrate of Al2O3 or glass is used as the lower electrode of this capacitor. A dielectric thin film 2 expressed by MgTiO3 is formed on the lower electrode. The film 2 is formed by applying a precursor solution of a compound which becomes the MgTiO3 after heat treatment to an electrode 1 and heat-treating the applied solution. The precursor solution of the compound is obtained by mixing alcoxides of metallic magnesium and titanium in a solvent, such as butanol, 2- methoxyethanol, etc., at a Mg/Ti molar ratio of '1' and allowing them to react to each other.

Thin film capacitor and its manufacture

PURPOSE:To control the ferro-electric property of a ferro-electric thin film by removing from a system of reaction, a reaction product quantity except for compounds which are produced by such compound reaction as in compound reaction mixed liquid of Pb, Ti, Zr components and organic substance. CONSTITUTION:In the manufacture of a ferro-electric thin film which is expressed in an usual expression Pb(ZrxTi1x)O3 (where 0<=x<=1), a substance that is obtained by removing a quater to three quaters of the quantity of the reaction product excluding compounds which are produced by such compound reaction from a system of reaction of reaction mixed liquid of the Pb, Ti, Zr components and organic substance is applied on a substrate, then the applied face is sintered. Thus, it is possible to control at will the grain size of the thin film component in the range from 0.02 to 1mu.

Manufacture of ferro-electric thin film

PURPOSE:To obtain a monomorph type piezoelectric element for use in an actuator by oxidizing the surface of a ferrodielectric semiconductor porcelain and grinding only one side surface except an oxide phase. CONSTITUTION:After a ferrodielectric semiconductor porcelain barium titanate is adjusted, semiconductivity is provided and manufactured. In order to provide the semiconductivity in barium titanate, elements, such as group 5A element, gallium, bismuth, antimony, tungsten, rare earth elements are added to the barium titanate. The semiconductor thus obtained is then surface oxidized. The surface oxidation is executed by an electrolytic oxidizing method with mixture solution of sodium nitrite containing water-ethylene glycol as an electrolyte. This porcelain is heat treated at 900 deg.C or higher. Thereafter, only the oxide phase of one side surface remains, the other side surface is ground until it becomes a semiconductor phase, and electrodes are attached thereto as an actuator.

Sakai Naomichi

Papers

Monomorph actuators using semiconductive ferroelectrics

New monolithic actuators, 'monomorphs', using semiconductive ferroelectrics.

Thin film capacitor and its manufacture

Manufacture of ferro-electric thin film

Surface oxide type monomorph actuator and manufacture thereof