An electronic device is provided which includes a light emitting module that radiates infrared light, a window disposed on the light emitting module and having a specific refractive index with respect to the infrared light, wherein the window includes a refraction part that totally reflects the infrared light inside the window in correspondence with the specific refractive index, and a fingerprint sensor disposed under the window and obtaining a fingerprint of a user based on a user input on the window by using scattered light of the infrared light.

Electronic device including fingerprint sensor and operating method thereof

After a mother vernier pattern is formed in a scribe region of a semiconductor substrate, a child vernier pad is formed on the inner region of a mother vernier, and a child vernier is formed on the child vernier pad in order to obviate the step of the mother vernier. Thus, at the time of an exposure process for forming the child vernier, failure of the pattern due to the step can be prevented and alignment can be measured accurately.

Overlay vernier of semiconductor device and method of manufacturing the same

A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

Semiconductor device structures

Methods of forming openings in semiconductor structures

A method of fabricating a semiconductor device includes providing a substrate including a first region and a second region. The method includes forming a first layer on the substrate. The first layer has a first hole on the first region and a second hole on the second region. The method includes forming a second layer in the first hole and the second hole. The method includes forming a mask pattern on the second region of the substrate. The method includes polishing the second layer to form a pattern in the first hole and an overlay key pattern in the second hole. A top surface of the overlay key pattern is further from the substrate than a top surface of the pattern in the first hole.

Method of fabricating a semiconductor device with an overlay key pattern

A method for manufacturing a semiconductor device comprising dishing a part of a center of an isolation oxide film to form an overlay vernier having a step difference, prevents an attack in a CMP process of a gate polysilicon layer and improves an overlay characteristic due to the right-and-left symmetrical structure of the overlay vernier.

Method for manufacturing semiconductor device with overlay vernier

An exposure mask of a semiconductor device comprises a substrate Recesses are etched on a surface of the substrate to change a refractive index of an incident light The changed refractive index causes a diffraction angle of the incident light to increase or decrease As a result of the change in the diffraction angle, ultra fine patterns for highly integrated semiconductor devices may be formed without being adversely impacted by a proximity effect

Exposure mask and method for manufacturing semiconductor device using the same

An exposure mask of a semiconductor device is provided to achieve an ultra micro pattern for a semiconductor device and to prevent the proximity effect by changing the refraction rate of an incident light forcibly to decrease a diffraction angle. A first pattern(115) is formed on a transparent substrate(100). A second pattern(120) is formed with a scratch type at a lower portion of the transparent substrate by using a laser or a FIB. The first pattern is made of chrome. The first pattern is a line/space pattern.

Sang Jun Han

Papers

Method for manufacturing semiconductor device with overlay vernier

Exposure mask and method for manufacturing semiconductor device using the same

Exposure mask of semiconductor device