Advanced packaging

A modification of the Wilkinson power divider is presented that eases planar implementation while maintaining performance. By adding transmission lines between the resistor and the quarter-wave transformers of the traditional design, a range of valid solutions exists that meet the conditions of being reciprocal, isolated between the output ports, and matched at all ports. The proposed design is particularly useful at millimeter-wave frequencies where reduced physical dimensions make a circuit configuration suitable for low-cost package-level implementation difficult using traditional methods. Two frequency bands are demonstrated. At V-band, the circuit gives 0.3-dB excess insertion loss, 19-dB isolation, and 50% bandwidth. At the W-band, the circuit gives 0.75-dB excess insertion loss, 24-dB isolation, and 39% bandwidth.

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Modified Wilkinson Power Dividers for Millimeter-Wave Integrated Circuits

Gap waveguide technology represents an interesting alternative as low-loss, cost-effective, and high-performance transmission line and package of microwave and millimeter-wave systems. A Ka-band coupled-resonator filter for a radio link diplexer, which requires high selectivity to isolate transmit and receiving channels, is proposed and realized using gap waveguide technology. The band-pass filter, which has a central frequency of 37.37 GHz and a pass bandwidth of 560 MHz, is fabricated between two parallel metal plates, leaving an air gap between them. After milling one of the plates, silver-plating is applied on them. Measurements show a minimum in-band insertion loss of 1 dB and agree quite well with simulations.

/pdf/ka-band-gap-waveguide-coupled-resonator-filter-for-radio-5cljx85cou.pdf

Ka-Band Gap Waveguide Coupled-Resonator Filter for Radio Link Diplexer Application

A semiconductor package and method for manufacturing the same is disclosed. The semiconductor package comprises a semiconductor chip, a circuit board, an electrical connection means, an encapsulation material and a plurality of conductive balls. The semiconductor chip has a first surface and a second surface. A plurality of input and output pads are formed on one of the first and second surfaces. The circuit board comprises a thin film having a first surface and a second surface and being provided with a center hole in which the semiconductor chip is positioned, a plurality of circuit patterns being formed on the first surface of the thin film and including a plurality of bond fingers and ball lands, and a cover coat covering the circuit board except for the bond fingers and the ball lands. The electric connection means electrically connects the input and output pads of the semiconductor chip with the bond fingers of the circuit board. The encapsulation material covers the semiconductor, the electric connection means and a portion of the circuit board. The conductive balls are fusion-welded on the ball lands of the circuit board.

Semiconductor package and method for manufacturing the same

A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.

Semiconductor package and fabricating method thereof

This letter presents a W -band micromachined air-cavity bandpass filter (BPF) using a novel integration method of a micromachined silicon air-cavity resonator with silicon pillars. With silicon pillars, which were fabricated simultaneously with a deep reactive ion etching process for forming a cavity structure, a micromachined silicon air-cavity can be easily integrated on a package substrate with a flip-chip interconnection. In this work, a thin-film substrate with a flip-chip interconnection was employed as a package substrate, in which the silicon pillars were used as the current probe between the air-cavity resonator and TFMS input/output feeding lines. With the novel integration of the air-cavity resonator, a W-band four-pole BPF has been successfully demonstrated on a thin-film substrate with a flip-chip interconnection, which exhibits a minimum insertion loss of 1.3 dB and return loss better than 16 dB with a 4.9% 3-dB fractional bandwidth at a center frequency of 93.7 GHz.

$W$ -Band Bandpass Filter Using Micromachined Air-Cavity Resonator With Current Probes

We propose a planar V-band beam-steering antenna based on a millimeter-wave (mm-wave) system-on-package technology using advanced thin-film technology on a silicon mother board. The thin-film substrate has the capability of integrated passive elements and flip-chip interconnection. Space-consuming components such as a microstrip Rotman lens and patch antennas are implemented on a low-loss, low-cost, and low-dielectric-constant material, benzocyclobutane. V-band monolithic microwave integrated circuits, a power amplifier, and a SP4T switch, are flip-chipped on the thin-film substrate while minimizing parasitic effects. The fabricated antenna module shows if-plane beam steering at four angles, plusmn6deg and plusmn20deg. The measured effective isotropic radiated power is in the range of 17.3-18 dBm. To our knowledge, this is the first demonstration of a planar mm-wave beam-steering antenna module on a thin-film substrate incorporating integrated terminating loads and flip-chip interconnections.

A V-Band Beam-Steering Antenna on a Thin-Film Substrate With a Flip-Chip Interconnection

In this paper, a system-on-package (SOP) technology using a thin-film substrate with a flip-chip interconnection has been developed for compact and high-performance millimeter-wave (mm-wave) modules. The thin-film substrate consists of Si-bumps, ground-bumps, and multilayer benzocyclobutene (BCB) films on a lossy silicon substrate. The lossy silicon substrate is not only a base plate of the thin-film substrate, but also suppresses the parasitic substrate mode excited in the thin-film substrate. Suppression of the substrate mode was verified with measurement results. The multilayer BCB films and the ground-bumps provide the thin-film substrate with high-performance integrated passives for the SOP capability. A broadband port terminator and a V-band broad-side coupler based on thin-film microstrip (TFMS) circuits were fabricated and characterized as mm-wave integrated passives. The Si-bumps dissipate the heat generated during the operation of flipped chips as well as provide mechanical support. The power dissipation capability of the Si-bumps was confirmed with an analysis of DC-IV characteristics of GaAs pseudomorphic high electron-mobility transistors (PHEMTs) and radio-frequency performances of a V-band power amplifier (PA). In addition, the flip-chip transition between a TFMS line on the thin-film substrate and a coplanar waveguide (CPW) line on a flipped chip was optimized with a compensation network, which consists of a high-impedance and low-impedance TFMS line and a removed ground technique. As an implementation example of the mm-wave SOP technology, a V-band power combining module (PCM) was developed on the thin-film substrate with the flip-chip interconnection. The V-band PCM incorporating two PAs with broadside couplers showed a combining efficiency higher than 78%.

A Millimeter-Wave System-on-Package Technology Using a Thin-Film Substrate With a Flip-Chip Interconnection

Provided are a semiconductor package and method of fabricating the same The package includes an interconnection substrate, a semiconductor chip mounted on the interconnection substrate, a lateral wire bonded on the interconnection substrate and configured to enclose a side surface of the semiconductor chip, and a metal layer disposed on the semiconductor chip and electrically connected to the lateral wire

Semiconductor package and method of fabricating the same

The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.

Sangsub Song

Papers

$W$ -Band Bandpass Filter Using Micromachined Air-Cavity Resonator With Current Probes

A V-Band Beam-Steering Antenna on a Thin-Film Substrate With a Flip-Chip Interconnection

A Millimeter-Wave System-on-Package Technology Using a Thin-Film Substrate With a Flip-Chip Interconnection

Semiconductor package and method of fabricating the same

Memory Device and Fabricating Method Thereof