Electronic products are becoming an essential part of our daily life. There is a huge demand to produce small and portable but powerful electronic products. Carbon nanotubes (CNTs) have excellent electrical, mechanical and thermal properties which can be exploited to build next-generation electronics. This paper reviews different types and properties of CNTs and also presents the CNT-based electronics along with their advantage over the conventionally used products. CNT usage in electronics, such as biosensing, energy and data storage devices, is discussed. CNT-based field emission devices, which showed outstanding results are also discussed. The current challenges of CNT-based electronics and the future of CNT in electronics applications are mentioned.Graphical Abstract 

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A Critical Review of the Role of Carbon Nanotubes in the Progress of Next-Generation Electronic Applications

Design and analysis of CNTFET based 10T SRAM for high performance at nanoscale

Carbon nanotube devices offer intrinsic advantages for high-performance logic device applications. The ultrasmall body of a carbon nanotube-the tube diameter-is the key feature that should allow aggressive channel length scaling, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents. In addition, the narrowness of the tube is critical to implementation of novel device concepts like the tunneling transistor. By understanding the unique capabilities of carbon nanotubes and using them in unconventional designs, novel nanoelectronic applications may become feasible. However, much better control of materials quality must be obtained, and new fabrication processes must be developed before such applications can be realized.

Carbon Nanotubes for High-Performance Electronics-Progress and Prospect : The prospect, for nanotube field effect transistors that can compete with silicon technology, is extremely promising but critical tasks still lie ahead

A CNFET-based nonvolatile 4CNFET2M resistive RAM (ReRAM) cell is proposed in this paper. In this design, four CNFETs are employed as high-speed, low power and high endurance switches while the two memristors constitute the memory element. In this paper, the proposed 4CNFET2M ReRAM has been compared with the standard 6T SRAM (S6T) cell and the contemporary 2T2M ReRAM cell. The proposed cell shows 1.68 ×/2.14 × shorter read delay (TRA) when compared to S6T/2T2M while exhibiting 4.16 × shorter write delay (TWA) than that of 2T2M @ VDD = 1 V. Moreover, at VDD = 1 V, it displays a 2.32 × narrower spread in TWA than 2T2M as well as 8.0 ×/7.25 × narrower spread in TRA than that of S6T/2T2M. The proposed cell consumes 2.57 × 106 ×/2.70 × lower hold power (HPWR) than that of S6T/2T2M at VDD = 1 V. In addition, it exhibits tolerance to variations in temperature as well as pitch and Vth of memristor. All this is achieved at a 32.44 × penalty in TWA when compared to S6T. The use of CNFET devices, which possess far superior electrical characteristics in comparison to traditional CMOS devices, integrated with memristor technology, paves the way for such major improvements in design metrics of the proposed cell.

Design of memristor based low power and highly reliable ReRAM cell

A low leakage TG‐CNTFET–based inexact full adder for low power image processing applications

In this paper we compare and justify the advantage of CNTFET devices over MOSFET devices in nanometer regime. Thereafter we have analyzed the effect of chiral vector, and temperature on threshold voltage of CNTFET device. After simulation on HSPICE tool we observed that the high threshold voltage can be achieved at low chiral vector pair. It is also observed that the effect of temperature on threshold voltage of CNTFET is negligibly small. After analysis of channel length variation and their impact on threshold voltage of CNTFET as well as MOSFET devices, we found an anomalous result that the threshold voltage increases with decreasing channel length in CNTFET devices, this is quite contrary to the well known short channel effect. It is observed that at below 10 nm channel length the threshold voltage is increased rapidly in case of CNTFET device whereas in case of MOSFET device the threshold voltage decreases drastically below 10 nm channel length.

Sanieet Kumar Sinha

Papers

Advantage of CNTFET characteristics over MOSFET to reduce leakage power