The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors.

In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the charged and neutral charged biomolecules such as protein, nucleic acids, antibody agents and viruses. Due to these highly sensitive biosensor devices, we mainly focused on schottky tunnel field-effect transistors (STFET), these transistors have unique properties such as enhanced transconductance and gate controllability, low leakage current etc. In addition, we studied the performances and challenges of STFET by dielectric modulation doping concentration, dielectric modulation, and heterostructure devices. Further, we have reviewed the comparison of STFET and conventional devices. This article reviews mainly on the study of high sensitivity analysis of STFET and modified Schottky-TFET structures for the use of biosensing applications. 

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Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications

Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor

High-performance and multifunctional organic field-effect transistors

In this review, we explored the modern development of schottky field effect transistor (SK FET) structures and the improvement of sensitivity of nanowire sensors using dielectric modulation. Here, the recent developments compared with the conventional schottky FET sensor, and modified conventional configuration have improved sensitivity and faster responses controlled by dielectric modulation and changing the barrier height. The change in sensitivity- with the current optimization has been considered for dissimilar gate, and drain voltage. The dielectric modulation can advance the finding limits, sensitivity, and reaction time of the novel structures in dissimilar applications, such as U-V finding, gas and chemical/ biosensing. In addition, the efficiency and doped channel have been deliberately studied under dissimilar biomolecule model specifications. This article reviews a recent study on emerging future generation SK FET biosensors with their sensitivity performance and the effect of their metal and channel contact is presented. 

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Recent Progress on Sensitivity Analysis of Schottky Field Effect transistor Based Biosensors

A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications

In this paper, Analog/RF performance of InAs/InGaAs channel-based nanowire tunneling field effect transistors (TFETs) have been investigated using TCAD tool. The proposed TFET is designed based on InAs/InGaAs channel using nanowire technology and Z r O 2 gate dielectric with 10 nm gate length and 5 nm channel thickness. The device operates on band-to-band tunnelling principle. The objective is to enhance the device performance and to analyze the RF/Analog parameters. Simulations are performed using Silvaco TCAD tool. Different RF/Analog parameters such as maximum oscillation frequency (f max ), drain current (I D ), cut off frequency (f T ), transconductance (g m ), gate-to-source (c gs ) and gate-to-drain (c gd ) capacitance have been analyzed. RF/Analog parameters of InAs/InGaAs channel-based nanowire TFET showed better enhancement over conventional Si-TFET. The presence of InAs/InGaAs channel makes the proposed TFETs highly preferable for low power applications by achieving maximum f max and f T .

Saravanan M

Papers

A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications

Investigation of RF/Analog Performance of InAs/InGaAs Channel Based Nanowire TFETS