An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Switch Circuit and Method of Switching Radio Frequency Signals

A multi-band antenna switch circuit including a diplexer connected to an antenna terminal for demultiplexing signals of different passing bands, a first and a second switch circuit for switching a high frequency signal and a low frequency signal demultiplexed by the diplexer to a plurality of transmission/reception terminals, a first and a second low pass filter connected to a transmission path between the diplexer and the transmission terminal or between the first and the second switch circuit and the transmission terminal, and a notch filter provided between the diplexer and the first switch circuit or between the diplexer and the second switch circuit. The multi-band antenna switch circuit includes a high pass filter having an input terminal and an output terminal and provided at least between the diplexer and the antenna terminal and including a first inductor connected between the input terminal and the ground, a first capacitor connected between the input terminal and the output terminal, a second inductor connected to the output terminal, and a second capacitor connected between the second inductor and the ground.

Bypass filter; multi;band antenna switch circuit; and layered module composite part and communication device using them

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink

A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF− terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB.

Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device

A high-frequency switch module which comprises a high-frequency switch circuit connected among an antenna, a transmission circuit, and a reception circuit and comprising switching elements and a surface acoustic wave filter connected between the high-frequency switch circuit and the reception circuit, uses a laminate constituted of dielectric layers having electrode patterns as the multilayered board, and has a phase correction circuit disposed between the switch circuit and the surface acoustic wave filter, wherein the high-frequency switch circuit comprises a switching element, a transmission line, and a capacitor as main elements, with at least a part of the transmission line and the capacitor constituted of an electrode pattern in the laminate, and with the surface acoustic wave filter mounted on the laminate.

High-frequency switch module

A high-frequency module is connected to a transmitting circuit (TX), a receiving circuit (RX) and an antenna (ANT) to control the connections between the transmitting circuit (TX) and the antenna (ANT) and between the receiving circuit (RX) and the antenna (ANT). The module comprises means (2) for controlling transmitted signals, which includes a first phase-shift circuit (5) and a high-frequency amplifier (4) provided between the antenna (ANT) and the transmitting circuit (TX). The high-frequency amplifier (4) and the first phase-shift circuit (5) are integrated into a module composed of a plurality of dielectric layers.

High-frequency module and wireless communication device

A high-frequency module is connected to a transmitting circuit, a receiving circuit, and an antenna to control the connections between the transmitting circuit and the antenna and between the receiving circuit and the antenna. The module includes means for controlling transmitted signals, which includes a first phase-shift circuit and a high-frequency amplifier provided between the antenna and the transmitting circuit. The high-frequency amplifier and the first phase-shift circuit are integrated into a module composed of a plurality of dielectric layers.

High-frequency composite part and wireless communications device comprising it

PROBLEM TO BE SOLVED: To provide a compact and lightweight high-frequency composite component simple in circuit configuration, excelling in the insertion loss of a transmission signal, and small in power consumption. SOLUTION: In the high-frequency composite component being a low-pass filter, a plurality of filter circuits different in passbands are connected to an antenna terminal for handling a plurality of transmission/reception systems different in passbands, a transmission signal control means 2 having a first phase-shift circuit and a high-frequency amplifier which are integrally formed in a laminate module is provided at the rear stage of at least one of the filter circuits, each filter circuit is an LC circuit comprising an inductor and a capacitor, the inductor is formed in the laminate module as a distributed constant line, the capacitor is formed with capacitor electrodes facing each other interposing a dielectric layer in the laminate module, and one of the filter circuits includes a distributed constant line formed with line electrodes overlapping in an lamination direction, and a capacitor formed of parasitic capacitance generated between the line electrodes which are connected in parallel to each other. COPYRIGHT: (C)2011,JPO&INPIT

Satoru Yokouchi

Papers

Bypass filter; multi;band antenna switch circuit; and layered module composite part and communication device using them

High-frequency switch module

High-frequency module and wireless communication device

High-frequency composite part and wireless communications device comprising it

High-frequency composite component, and wireless communications device using the same