To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

Semiconductor device, and manufacturing method of the same

A driver for a DC-to-DC converter that may utilize a flyback or buck-boost converter circuit. The driver includes a driver circuit and an interface circuit. The interface circuit has a sensor sensing an input voltage from a DC supply and generating a sensor signal to a driver selector. The driver selector compares the sensor signal to a comparison voltage to determine the type of converter circuit and then transmits a selector signal to a driver circuit where it is used to control one or more of the components of the driver circuit, such as the logic circuit which is used for driving the converter to regulate the converter output. The sensor includes a sense resistor along with a current-sense amplifier, which is adapted for connection to a high side or a low side of a power supply while still producing a substantially equivalent output voltage or sensor signal.

Driver with control interface facilitating use of the driver with varied DC-to-DC converter circuits

The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Semiconductor device including a DC-DC converter

In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

Semiconductor Device and Method of Manufacturing the Same

The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

Semiconductor device including a DC-DC converter having a metal plate

A DC-DC converter facilitates preventing switching noises, caused by the switching of a main switching transistor and its driver, from affecting a control circuit adversely and securing stable operations of the converter. Specifically, the DC-DC converter includes a feed line LS 1 for the main circuit, a ground line LG 1 for the main circuit, a positive feed line LS 2 for the control circuit, a negative feed line LG 2 for the control circuit 3, an insulation resistance Rd 1 connected to the feed line LS 1 or to the feed line LS 2, (or) an insulation resistance Rd 2 connected to the ground line LG 1 or to the feed line LG 2, and, if necessary, a filter capacitor Cd connected in parallel to the control circuit 3.

Satoshi Sugahara

Papers

DC-DC converter which supresses power supply noise in low power circuit