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Scott C. Willis

Researcher at Lockheed Martin Corporation

Publications -  6
Citations -  161

Scott C. Willis is an academic researcher from Lockheed Martin Corporation. The author has contributed to research in topics: Power semiconductor device & Switched-mode power supply. The author has an hindex of 6, co-authored 6 publications receiving 161 citations.

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Patent

Efficient fault tolerant switching circuit for redundant d. c. power supplies

TL;DR: In this article, two power sources are connected to a load by a pair of MOSFET control switches, each connected respectively in series between one of the sources and the load, with their integral diodes forwardly biased between the power source and load.
Patent

Circuit for limiting inrush current through a transistor

TL;DR: In this article, a power transistor switched power supply connecting a power source to a capacitive load, including a circuit and method for limiting the inrush surge current through the power transistor, is described.
Patent

Fault tolerant MOSFET driver

TL;DR: In this article, a back-to-back MOSFET switch for a failed power supply is maintained in an off state by the negative bias provided by the redundant supply.
Patent

Power bus digital communication system

TL;DR: In this article, a power bus digital communication system was proposed to reduce power and signal cabling in a space satellite by transformer coupling digital signal sources to power bus circuits, the transformer coupling devices in all the circuits being in parallel relation and electrically isolated from a power supply whereby the digital communication sources may communicate among themselves at a DC power level using a square wave modulated according to a Manchester code.
Patent

Fault tolerant power distribution

TL;DR: In this article, a power distribution current path includes a modulated switch to control the amount of power delivered to the load via a load current path, and the control circuit for modulating the opening and closing of the switch is connected in parallel across the capacitor.