Disclosed is a reference voltage generating circuit including first to third current-to-voltage converter circuits, a control circuit for exercising control so that the terminal voltage of the first current-to-voltage converter circuit is made equal to that of the second current-to-voltage converter circuit, and current mirror circuits for driving the first to third current-to-voltage converter circuits. A preset voltage of the third current-to-voltage converter circuit is used as a reference voltage. The first current-to-voltage converter circuit is composed of a diode. The second current-to-voltage converter circuit includes a plurality of parallel connected diodes, a resistor connected in parallel with the plural parallel connected diodes and a resistor connected in series with the parallel-connected diodes and the resistor. The third current-to-voltage converter circuit is composed of a resistor.

Reference voltage generating circuit

A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled in series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor.

Low voltage temperature sensor and use thereof for autonomous multiprobe measurement device

A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.

Low power voltage reference

An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.

On die thermal sensor of semiconductor memory device

A fast start-up low-voltage bandgap reference voltage generator uses two current generators to provide a first current having a positive temperature coefficient and a second current having a negative temperature coefficient, respectively, and a resistor to generate a temperature independent output voltage according to the sum of the first and second currents. The current generator for providing the first current has a self-bias circuit which uses a single MOSFET to establish the first current, and thereby avoids error caused by mismatched MOSFETs.

Fast start-up low-voltage bandgap reference voltage generator

A band-gap reference voltage generator includes a first reference current generator, a second reference current generator, and a reference voltage generator. The first reference current generator includes: a driver generating a first reference current in response to a first voltage signal generated by comparison of the unique voltage and the thermal voltage. The second reference current generator includes a driver generating a second reference current in response to a second voltage signal generated by comparison of a division voltage of a power-supply voltage and the unique voltage. The reference voltage generator includes a driver forming current mirrors in association with each of the first reference current generator and the second reference current generator, respectively, and generating a third reference current and a fourth reference current via the formed current mirrors, and a current-voltage converter converting the sum of the third reference current and the fourth reference current into a reference voltage, and outputting the reference voltage.

Se Jun Kim

Papers

Band-gap reference voltage generator