The nitrate radical: Physics, chemistry, and the atmosphere

Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

https://iopscience.iop.org/article/10.1143/JJAP.49.030001/pdf

Radiation Chemistry in Chemically Amplified Resists

Interactions of organic nitroso compounds with metals.

https://projects.tropos.de/afo2000g3/FEBUKO_dateien/esm/esm_18_herrmann_etal.pdf

Towards a more detailed description of tropospheric aqueous phase organic chemistry: CAPRAM 3.0

https://pubs.rsc.org/en/content/articlepdf/2015/cc/c5cc01580d

Visible light photooxidation of nitrate: the dawn of a nocturnal radical

Kinetic study for reactions of nitrate radical (NO3.bul.) with substituted toluenes in acetonitrile solution

Kinetics for reactions of the nitrate radical (NO3.cntdot.) with aldehydes in acetonitrile

The rate constants for the reaction of NO3· with sulfur compounds in acetonitrile have been determined by the flash photolysis method. The rate constant for dimethyl sulfone (2.7 × 104 M−1s−1 at −10°C) is larger than that of the deuterium derivative, indicating that NO3· abstracts the hydrogen atom from dimethyl sulfone. In the case of dimethyl sulfide, the rate constant was evaluated to be 1.5 × 109 M−1 s−1 at −10°C; the transient absorption band attributable to the cation radical was observed after the decay of NO3·, suggesting the electron transfer reaction from the sulfide to NO3·. For diphenyl sulfide and dimethyl disulfide, the electron transfer reactions were also confirmed. For dimethyl sulfoxide, the reaction rate constant of 1.2 × 109 M−1 s−1 (at −10°C) was not practically affected by the deuterium substitution, suggesting that NO3· adds to sulfur atom forming (CH3)2Ṡ(O)-ONO2. On the other hand, for diphenyl sulfoxide, the electron transfer reaction occurs. By the comparison of these rate constants in acetonitrile solution with the reported rate constants in the gas phase, the change of the reaction paths was revealed.

Seiji Akiho

Papers

Kinetic study for reactions of nitrate radical (NO3.bul.) with substituted toluenes in acetonitrile solution

Kinetics for reactions of the nitrate radical (NO3.cntdot.) with aldehydes in acetonitrile

Flash photolysis study for reactions of NO3· with sulfur compounds in acetonitrile solution

Carbon distributions of bituminous coals studied by dipolar dephasing n.m.r. and FT-i.r.