PURPOSE:To form an inverted negative type pattern having high contrast and no swell without using a special device by coating a substrate with novolac resin positive photoresist, prebaking it, then emitting a charged beam to the prescribed portion, heat treating it, and then developing with an organic solvent. CONSTITUTION:A positive type photoresist 2 is coated in 1mum of thickness on a silicon wafer 1, prebaked at 85 deg.C for 20min, and the pattern is exposed by an electron beam 3 in the exposure amount of 38muc/cm . Then, it is intermediately baked at 120 deg.C for 20min, developed with an organic solvent of isoamyl acetate for approx. 20sec. Then, the exposed portion 4 remains to form an inverted negative pattern 5. The inverted pattern is not formed at a low temperature, and as the temperature rises, contract increases, but a thermoset occurs at 150 deg.C or higher, and no pattern is formed. When it is intermediately baked at 100 deg.C or higher, a value higher than the contract of the general negative resist is obtained.

Method of forming pattern

PURPOSE:To improve sensitivity of a resist film by bringing an acrylate type polymer resist film into contact with C/cm but 0.52X10 C/cm without pretreatment.

Method for improving sensitivity of resist film

PURPOSE:To obtain high sensitivity and high resolution, by using a developing soulution prepared by adding choline halide as an alkali component to ethyl alcohol, and isopropyl alcohol as a rinse solution.

Sekikawa Kiyouzou

Papers

Development process for methylmethacrylateemethacrylic acid p mmaama resi st

Sekikawa Kiyouzou

Papers

Development process for methylmethacrylateemethacrylic acid p *mmaama* resi st

Development process for methylmethacrylateemethacrylic acid p mmaama resi st