S
Shan Wong
Researcher at Applied Materials
Publications - 4
Citations - 290
Shan Wong is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Substrate (electronics). The author has an hindex of 3, co-authored 4 publications receiving 290 citations.
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Patent
Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
TL;DR: In this article, a chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate is described, which includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxylcontaining precursor in the process chamber.
Patent
Gap-fill depositions in the formation of silicon containing dielectric materials
Nitin K. Ingle,Shan Wong,Xinyun Xia,Vikash Banthia,Won B. Bang,Yen-Kun Victor Wang,Zheng Yuan +6 more
TL;DR: In this article, the authors proposed a method to form a silicon oxide layer, which includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the siliconcontaining precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS.
Patent
Limited thermal budget formation of PMD layers
TL;DR: In this paper, a method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing process gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases.
Patent
Limited thermal budget formation of pre-metal dielectric layers
TL;DR: In this paper, a method of filling a gap which is defined by adjacent raised features on a substrate includes depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between a silicon-containing process gas, a phosphorous-containing processing gas, and an oxidizing processing gas.