An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Light-emitting device

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film

Field-effect transistor

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6 , a drain electrode 5 , a gate electrode 4 , a gate insulating film 3 , and a channel layer 2 , an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

Amorphous oxide and thin film transistor

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Amorphous oxide and field effect transistor

PROBLEM TO BE SOLVED: To solve the problem that in ZnO as a transparent oxide semiconductor, it is difficult to reduce an electric conductivity and it is impossible to constitute a normally off field effect type transistor, or as it is difficult to form an amorphous state, an amorphous transistor adaptive for a large area cannot be manufactured. SOLUTION: In a homologous compound InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) single crystal thin film manufactured by a reactive solid-phase epitaxial method, a deviation from a stoichiometry is very small and a good insulator is obtained near room temperatures. By using the homologous compound single crystal InMO 3 (ZnO) m (M=In, Fe, Ga or Al; m=an integer of 1 to 49) thin film as an active layer, a transparent thin film field effect type transistor having a good switching characteristic can be manufactured by a normally off operation. COPYRIGHT: (C)2004,JPO

Transparent thin film field effect type transistor using homologous thin film as active layer

PROBLEM TO BE SOLVED: To solve a problem that, since GaN used as a device material for ultraviolet-light detection has photosensitivity to visible light and an ultraviolet range, a device needs to remove unnecessary light by using an optical filter and make only ultraviolet light having a specified wavelength incident on a GAN detector. SOLUTION: A pn junction device comprises a Zn x Mg 1-x O (0.7 x Mg 1-x O single crystal thin film as a polycrystalline or amorphous film and annealed for epitaxial growth and contains Li ions exhibiting p-type electric conduction, or an amorphous InGaO 3 (ZnO) m (m: an integer between 1 and 50) which is formed of a ZnRh 2 O 4 film and deposited on the pn junction device and ITO film and shows n-type electric conduction, and an amorphous NiO thin film or ZnRh 2 O 4 thin film which is deposited on InGaO 3 (ZnO) m and shows p-type electric conduction. COPYRIGHT: (C)2004,JPO

Oxide semiconductor pn junction device

Disclosed are a p-channel thin-film transistor and process for producing the transistor, which can overcome problems in the past such that a CMOS circuit could not have been prepared with an oxide TFT due to the absence of p-type TFT and a simple AM-OLED drive circuit comprising TFT connected directly to an anode could not have been constructed. The p-channel thin-film transistor is characterized in that a thin film of stannous oxide (SnO) having a total content of Sn 4+ and Sn 0 (tin metal) of less than 10 atom% is deposited on a substrate of a thin-film transistor to form a channel layer.  In a gas phase method, SnO is used as a target, and a film is formed while regulating the degree of oxidation of Sn deposited on the substrate by utilizing the temperature of the substrate and the partial pressure of oxygen in the atmosphere.

P-CHANNEL THIN-FILM TRANSISTOR AND PROCESS FOR PRODUCING THE p-CHANNEL THIN-FILM TRANSISTOR

PROBLEM TO BE SOLVED: To solve a problem that an NiO thin film is an assemblage of polycrystalline bodies and has a surface having large unevenness and for example, even if a ZnO film is grown on the NiO polycrystalline thin film, the crystallinity of the ZnO is made so worse that a hetero-bonding cannot be produced. SOLUTION: The p-type oxide semiconductor NiO single crystal thin film is obtained by annealing the polycrystalline p-type oxide NiO thin film formed by a vapor growth method to form a single crystal. The single crystal thin film is constituted of a flat terrace and a sub-nanometer (nm) step in atomic level and has ≥10 -4 S/cm conductivity at a room temperature which is controllable by changing the concentration of Li contained as an acceptor in the range of ≤30at%. The temperature of the substrate is kept at ≤100°C and the polycrystalline p-type oxide NiO thin film is formed on a heat resistant single crystal substrate by the vapor growth method and annealed at 600-1,500°C to form the single crystal. COPYRIGHT: (C)2004,JPO

SUPER-FLAT P-TYPE OXIDE SEMICONDUCTOR NiO SINGLE CRYSTAL THIN FILM

L'invention porte sur un nouveau supraconducteur forme d'un compose non-oxyde, qui est une alternative aux supraconducteurs oxydes de cuivre perovskite. Un compose feuillete qui est represente par la formule chimique suivante : AF(TM)Pn (dans laquelle A represente au moins un element du groupe 2 du tableau periodique sous sa forme longue, F represente un ion fluor, TM represente au moins un element metal de transition choisi parmi Fe, Ru, Os, Ni, Pd et Pt, et Pn represente au moins un element du groupe 15 du tableau periodique sous sa forme longue), tout en ayant une structure cristalline de type ZrCuSiAs (groupe spacial P4/nmm). Le compose feuillete est converti en un supraconducteur en etant dope par des cations trivalents specifiques ou des anions divalents specifiques.

神谷利夫

Papers

Transparent thin film field effect type transistor using homologous thin film as active layer

Oxide semiconductor pn junction device

P-CHANNEL THIN-FILM TRANSISTOR AND PROCESS FOR PRODUCING THE p-CHANNEL THIN-FILM TRANSISTOR

SUPER-FLAT P-TYPE OXIDE SEMICONDUCTOR NiO SINGLE CRYSTAL THIN FILM

Composé feuilleté, supraconducteur et son procédé de fabrication

神谷 利夫

Papers

Transparent thin film field effect type transistor using homologous thin film as active layer

Oxide semiconductor pn junction device

P-CHANNEL THIN-FILM TRANSISTOR AND PROCESS FOR PRODUCING THE p-CHANNEL THIN-FILM TRANSISTOR

SUPER-FLAT P-TYPE OXIDE SEMICONDUCTOR NiO SINGLE CRYSTAL THIN FILM

Composé feuilleté, supraconducteur et son procédé de fabrication

神谷利夫