A work piece is mixed with Ni pieces having an average diameter of 1 mm and exhibiting catalytic activity to oxidation reaction of sodium phosphinate (NaH 2 PO 2 ) added as a reducing agent in a plating bath containing the reducing agent and a Ni salt to form a Ni—P film on an electrode made of Cu, Ag or Ag—Pd by auto-catalytic electroless plating. Then, the work piece is dipped in a plating bath containing an Au salt to form an Au film on the surface of the Ni—P film by substitutional electroless plating. This method is capable of forming a desired plating film only on a desired portion at a low cost.

Method of manufacturing electronic part, electronic part and electroless plating method

A thin film superconducting wire with a copper plating thin film produced on a surface of a laminated structure is inferior in bending properties to a thin film superconducting wire having no copper plating thin film. Therefore, a thin film superconducting wire according to the present invention is a thin film superconducting wire including a laminated structure having a substrate, a buffer layer located on one of main surfaces of the substrate, and a superconducting layer located on a main surface of the buffer layer opposite to a main surface facing the substrate. The thin film superconducting wire further includes a copper plating thin film covering an outer periphery of the laminated structure, a residual stress within the copper plating thin film serving as a compression stress. The laminated structure may have a sputtered silver layer. A silver covering layer covering the outer periphery of the laminated structure may be further provided between the copper plating thin film and the laminated structure.

Thin film superconducting wire and superconducting cable conductor

A monolithic electronic component includes a laminate including a plurality of stacked insulating layers and a plurality of internal electrodes which extend between the insulating layers and which have end portions exposed at predetermined surfaces of the laminate, first plating layers disposed on the predetermined surfaces of the laminate, and second plating layers disposed on the first plating layer. The first plating layers are made of a metal different from that used to make the internal electrodes. The first plating layers are formed by electroless plating. The second plating layers are formed by electroplating.

Monolithic electronic component and method for manufacturing monolithic electronic component

PROBLEM TO BE SOLVED: To allow a copper plating to favorably adhere to a mirror-finished surface of a base material, so as to form a fine pitch wiring pattern, and hence to form a circuit having superior high frequency properties SOLUTION: An electroless copper plating method is provided having: a first catalyst step of forming a first catalyst layer on a ceramic based material containing a glass component using a tin chloride solution and a palladium chloride solution, a pre-copper-plating heat treatment step of heating the ceramic base material in an atmosphere containing oxygen; a laminate catalyst treatment step of forming a laminate catalyst layer on the ceramic base material using a tin chloride solution and a palladium chloride solution; a plating treatment step of forming a copper plating film on the ceramic base material using a copper plating solution containing a small amount of nickel ions; and a post-copper-plating heat treatment step of heating the ceramic base material at a heat treatment temperature not more than the glass transition temperature thereof COPYRIGHT: (C)2006,JPO&NCIPI

Plating substrate, electroless plating method, and circuit forming method using the same

This thermistor element (1) comprises: an element body (10); and first and second external electrodes (41, 42) each of which covers a part of the outer surface of the element body (10). The element body (10) has first to fourth lateral surfaces (11, 14). The first lateral surface (11) and the second lateral surface (12) are positioned opposite to each other. The third lateral surface (13) and the fourth lateral surface (14) are positioned opposite to each other. The surface roughness of the first lateral surface (11) and the surface roughness of the second lateral surface (12) are equal to each other and represented by Ra1. The surface roughness of the third lateral surface (13) and the surface roughness of the fourth lateral surface (14) are equal to each other and represented by Ra2. The surface roughnesses satisfy Ra1 < Ra2, 0.1 [mu]m ≤ Ra1 ≤ 0.4 [mu]m and 0.4 [mu]m ≤ Ra2.

Thermistor element and electronic component

PROBLEM TO BE SOLVED: To provide a chip-type electronic component that facilitates a plating film to be coated on a surface of a base electrode, and also facilitates a protective film such as glass coating to be coated on a surface of an element body. SOLUTION: The chip-type electronic component includes the element body formed with internal electrodes inside, and terminal electrodes covering edges of the element body where the internal electrodes are exposed. The terminal electrode includes an edge part positioned at an edge of the element body and a side part formed to continue to the edge part and extending to four sides near the edges of the element body. If roughness of the surface of the element body which is not covered with the terminal electrode is expressed by αRa, and roughness of a surface of the side part is expressed by βRa, a ratio of βRa to αRa is expressed in a formula of 0.33≤βRa/αRa≤10. COPYRIGHT: (C)2011,JPO&INPIT

Chip-type electronic component

PURPOSE:To form an excellent electroless nickel plating film only on an electrode pattern formed on the surface of a substrate such as of ceramic by baking, etc, of silver or palladium-containing silver through electroless nickel plating CONSTITUTION:Silver or palladium-containing silver paste is applied to a substrate surface at a silver-pattern printing step 2, and baked at a baking step 3 to form an electrode pattern, the electrode pattern is treated with an acidic liquid at an acidic-liquid treating step 6 and treated with a reducing liquid at a reducing-liquid treating step 8, and an electroless nickel plating film of a uniform thickness is formed onto the electrode pattern at an electroless nickel plating step 9

Electrode for electronic part and its manufacture

PROBLEM TO BE SOLVED: To provide an electronic component that can be improved in Q-value in a high frequency band and can be reduced in loss in the high frequency band. SOLUTION: A plated metallic film 21 is formed on a dielectric body 1 and the residual stress S of the film 21 satisfies the relation -33.4 kg/mm .

勝長谷部

Papers

Chip-type electronic component

Electrode for electronic part and its manufacture

Electronic component and its manufacturing method

勝 長谷部

Papers

Chip-type electronic component

Electrode for electronic part and its manufacture

Electronic component and its manufacturing method

勝長谷部