A thermal recording material comprising a support and, sequentially superimposed thereon, an undercoating layer, which contains a pigment and a binder as main components, and a thermal recording layer, which contains an achromatic or hypochromic basic colorless dye and a developer capable of reacting with the basic colorless dye to thereby realize color formation as main components, wherein the undercoating layer comprises a carboxymethylcellulose exhibiting an etherification degree of 0.55 to 0.75. Causing the undercoating layer to further contain hydroxymethylcellulose is preferred from the viewpoint of high effectiveness.

Thermal recording material

Deviation in device characteristics due to mechanical stress is investigated experimentally and analytically from the viewpoints of scaling and hot-carrier effects. A stress analysis program, SIMUS (stress analysis program for multilayer structure) 2D/F, which can analyze the stress state of thin multilayer structures such as LSI devices throughout their manufacturing process, was used. In scaled MOS devices, the effect of uniaxial stress is reduced. However, the effect of vertical stress, such as mold stress, becomes a serious problem when the vertical stress causes compressive surface stress. Compressive stress has a serious effect on electron trapping, in SiO/sub 2./ These results provide important guidelines for the manufacture and package design of deep submicrometer devices. >

A new aspect of mechanical stress effects in scaled MOS devices

Plastic IC packaging subjected to moisture is vulnerable to delamination and cracking during the solder reflow process. Modeling the response of the delaminated plastic package is an essential step to fundamentally understand failure mechanisms and mechanics involved in the cooling, moisture absorption, and solder reflow process. A nonlinear finite element model was developed for predicting the deformation, stress, and fracture behavior of delaminated plastic packages induced by mechanical and hygro-thermal loads. The model consists of a sequentially coupled hygro-thermo-mechanical analysis considering moisture absorption, evaporation and interface contact and fracture analysis. A Lagrange Multiplier method was utilized to model the delamination interface condition. A general contact model was adopted which can handle complex contact conditions, such as arbitrary slippage and discontinuous curvature. A thermal contact was utilized to model the contact along delamination surfaces. Mixed mode fracture modes were elaborated. The model was verified by comparing existing analytical results with the predictions in the case of pulsed heating of the IC chip. Packaging responses and failure mechanisms due to encapsulation cooling, moisture absorption and evaporation, wave soldering, and interfacial moisture pressure loading are investigated, with consideration of temperature-dependent material properties change around the glass transition temperature for both die attach and molding compound. Packaging deformation and stress, crack tip driving force, doming of the delamination, and delamination growth stability as a function of time are discussed. >

Behavior of delaminated plastic IC packages subjected to encapsulation cooling, moisture absorption, and wave soldering

An apparatus and method for making a seam-welded steel pipe free of untempered martensite without seam anneal. The method includes selecting a steel containing a carbon concentration below a predetermined level, for example, 0.14% or 0.12% by weight. The method also includes flooding both outside and inside of the strip with a coolant while the weld seam is being formed, and continuing to immerse the welded strip for a sufficient time after the weld seam is formed to prevent the formation of untempered martensite. The apparatus includes a heater capable of heating the strip to a temperature sufficient to form a welded seam, a cooling module configured to supply a coolant to the welded seam both inside and outside of the strip as the weld seam is being formed, and another cooling module configured to immerse the welded strip in a coolant after the weld seam is formed for a sufficient length of time to prevent the formation of untempered martensite.

Seam-welded metal pipe and method of making the same without seam anneal

Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Methods for forming a ruthenium-based film on a substrate

The X-ray diffraction apparatus of the invention includes means capable of detecting the position and intensity distribution of the diffracted X-ray with respect to a thin bundle X-ray and means for moving the former means to a position at which the former means is capable of detecting the diffracted X-ray, and makes it possible to reliably and easily carry out rough detection of the position of the diffracted X-ray and fine detection of the intensity distribution of the diffracted X-ray without increasing the size of the diffracted X-ray detecting means.

X-Ray diffraction apparatus

PURPOSE:To prevent peeling between a lead frame and a resin generated on the bending of leads, and to obtain a semiconductor device having high damp- proofing and corrosion resistance by bending the lead frame on a resin molding process or before said process in the semiconductor device in which a member acquired by connecting a semiconductor element and the lead frame by a wire is sealed with the resin CONSTITUTION:The joining body of a chip 1, a tab 2, wires 3, and a previously bent lead frame 4 is held between a top force 5' and a bottom force 6' beforehand formed in conformity with the shape of the lead frame, and molded with a resin 7 Or the top force 5' and the bottom force 6' also function as a press mold bending the lead frame 4, thus connecting a bending process for the lead frame 4 and a molding process

Manufacture of semiconductor device

A fluxmeter includes an application unit for applying a magnetic field, a superconducting quantum interference element and a flux transmitting circuit. The flux transmitting circuit includes a pickup coil formed of a superconducting print coil and a core for the pickup coil. The core is formed of a soft magnetic material. The core serves to suppress the leakage of magnetic flux to magnetically couple the pickup coil and the superconducting quantum interference element efficiently to improve the sensitivity and resolution of the fluxmeter. The pickup coil may be manufactured by photolithography, sputtering, laser beam deposition, MBE deposition, MOCVD or spray pyrolysis.

Fluxmeter including squid and pickup coil with flux guiding core and method for sensing degree of deterioration of an object

On the basis of a finding that a magnetic hysteresis of a metal material, among magnetization characteristics changing with secular degradation of the metal material, shows a clear correspondence with the degree of degradation of the metal material, a change in such a magnetization characteristic is measured to estimate the degree of secular degradation of the metal material, In a typical embodiment, a superconducting quantum interference device is used to detect the magnetization characteristic of a measuring object. According to the present invention, the degree of embrittlement of a metal material used in an environment of high temperatures can be quickly detected in a non-destructive fashion so that the danger of brittle fracture of the metal material can be reliably prevented.

Method and apparatus utilizing a magnetic field for detecting degradation of metal material

Measurement of a physical property such as coercive force of a member to be inspected is performed at a plurality of locations in one region of the member. Similar measurement is performed in a plurality of different regions of the member and a maximum or minimum value (extreme value) is determined for each of the regions. On the basis of the extreme values thus determined, a recurrence period is determined in accordance with an extreme value statistic theory with the aid of a computer, whereon an estimated maximum value of the physical property of the member as a whole is determined from the recurrence period. On the basis of the estimated maximum value, the degree of deterioration of the member is predicted by the computer by consulting the data indicating the previously determined relation between the physical property and the degree of deterioration.

Shimizu Tasuku

Papers

X-Ray diffraction apparatus

Manufacture of semiconductor device

Fluxmeter including squid and pickup coil with flux guiding core and method for sensing degree of deterioration of an object

Method and apparatus utilizing a magnetic field for detecting degradation of metal material

Method and apparatus for predicting deterioration of a member constituting a part of equipment