An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An active matrix electroluminescent display device has an array of current-driven electroluminescent display elements (20), for example comprising organic electroluminescent material, whose operations are each controlled by an associated switching means (10) to which a drive signal for determining a desired light output is supplied in a respective address period and which is arranged to drive the display element according to the drive signal following the address period. Each switching means comprises a current mirror circuit (24, 25, 30, 32) which samples and stores the drive signal with one transistor (24) of the circuit controlling the drive current through the display element (20) and having its gate connected to a storage capacitance (30) on which a voltage determined by the drive signal is stored. Through the use of current mirror circuits improved uniformity of light outputs from the display elements in the array is obtained.

Active matrix electroluminescent display device

An organic light-emitting display includes a first substrate which includes a pixel region, and an encapsulation region which surrounds the pixel region, an organic light-emitting device which is located in the pixel region, a sealant which is located in the encapsulation region, and a dummy metal which is interposed between the first substrate and the sealant, where the encapsulation region includes a first encapsulation region and a second encapsulation region which is adjacent to the first encapsulation region, and the dummy metal is located in the first encapsulation region.

Organic light emitting display

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Light-emitting device and manufacturing method thereof

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

An active matrix liquid crystal display device has a plurality of unit pixels being arranged in a matrix configuration, each unit pixel being divided into a plurality of subpixels. Each of the subpixels has a subpixel electrode, a pixel transistor connected to the subpixel electrode, and a voltage controlling capacitor connected to the subpixel electrode. A voltage controlling capacitor line for supplying a compensation voltage signal is connected to the voltage controlling capacitor so that after the writing to the subpixel has been completed, the potential of the compensation voltage signal is varied to modulate the potential of the subpixel electrode to be a predetermined voltage, using the voltage controlling capacitor. Such combining of spatial dithering attained by a pixel-dividing technique and a capacitively-coupled driving method eliminates the need for digital-to-analog converter circuits, attains gray scale display based on a digital image signal, and achieves a reduction in power consumption.

Liquid crystal display device, electroluminescent display device, method of driving the devices, and method of evaluating subpixel arrangement patterns

The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.

Thin-film transistor, panel, and methods for producing them

The present invention is premised on a semiconductor device in which one semiconductor chip (8a,b) is mounted on each of both faces of a die pad (2) of a lead frame (1). The semiconductor chips (8a,b) are disposed such that the projected lines, on the die pad (2), of the corresponding sides of the semiconductor chips (8a,b), intersect with each other at an angle of 45° . The tips of inner leads (3) are located in the sides of a virtual octagon formed by outwardly enlarging an octagon formed by connecting, to one another, the apexes of the semiconductor chips (8a,b). The sides of the virtual octagon are respectively opposite to the sides of the semiconductor chips (8a,b). The number of the inner leads (3) of which tips are located in each of the sides of the virtual octagon, is the same as the number of bonding pads disposed at each of the sides of the semiconductor chips (8a,b). The inner leads (3) of which tips are located in each of the sides of the virtual octagon, are connected to the bonding pads at each of the sides of one of the first and second semiconductor chips (8a,b).

Semiconductor device and method of producing said semiconductor device.

A method for bonding leads of a film carrier to electrodes of electronic devices includes a step for positioning the leads and the electrodes with a predetermined clearance aligned to define corresponding pairs of the leads and electrodes, and a step for placing a bonding tool having a conductive bonding material served such that the conductive bonding material is located between the lead and electrode of one of the corresponding pairs. The method further includes a step for pressing the lead of one corresponding pair such that the conductive bonding material is pressed between the lead and the electrode, thereby bonding the lead and electrode. After bonding, the conductive bonding material is pulled to cut and leave the bonded conductive bonding material. Then, while the bonding tool is released from the bonded pair, the conductive bonding material is served to the bonding tool for the next bonding operation.

Method for bonding lead with electrode of electronic device

A semiconductor device comprises a square-shaped first semiconductor chip having a first LSI, a square-shaped second semiconductor chip having a second LSI, which is smaller in size than the first semiconductor chip and connected to the first semiconductor chip by face down bonding, and a square-shaped package made of a molding resin for packaging the first and second semiconductor chips. The respective centers of the first and second semiconductor chips are offset from each other, while the center of the second semiconductor chip is substantially coincident with the center of the molding resin.

Shinitsu Takehashi

Papers

Liquid crystal display device, electroluminescent display device, method of driving the devices, and method of evaluating subpixel arrangement patterns

Thin-film transistor, panel, and methods for producing them

Semiconductor device and method of producing said semiconductor device.

Method for bonding lead with electrode of electronic device

Semiconductor device having offsetchips