A method of manufacturing a semiconductor device includes forming a first insulating layer, forming a trench in the first insulating layer, forming an interconnect in the trench, forming a space between the first insulating layer and the interconnect, and disposing an upper surface of the interconnect at a position higher than an upper surface of the first insulating layer, forming an air gap in the space and forming an etching stopper film over the first insulating layer and the interconnect, forming a second insulating layer over the etching stopper film, and forming a via in the second insulating layer to be disposed over the interconnect.

Semiconductor device and method of manufacturing semiconductor device

A silicon carbide substrate including a first layer having first conductivity type, a second layer having second conductivity type, and a third layer having the first conductivity type is formed. A trench provided with an inner surface having a side wall surface and a bottom surface is formed, the side wall surface extending through the third layer and the second layer and reaching the first layer, the bottom surface being formed of the first layer. A silicon film is formed to cover the bottom surface. A gate oxide film is formed on the inner surface by oxidation in the trench. The gate oxide film includes a first portion formed by oxidation of the silicon carbide substrate, and a second portion formed by oxidation of the silicon film on the bottom surface. Accordingly, a method for manufacturing a silicon carbide semiconductor device having a high breakdown voltage is provided.

Method for manufacturing silicon carbide semiconductor device

A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing (RTA). By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the portion of the crystalline silicon film covered with the mask is also heated sufficiently and the catalyst element existing in this region moves to the phosphorus-implanted, amorphous portion having high gettering ability. As a result, the concentration of the catalyst element is reduced in the portion of the silicon film covered with the mask. A semiconductor device is manufactured by using this portion.

Method of Manufacturing Semiconductor Device

An electronic assembly comprises a semiconductor device that has conductive pads on a semiconductor first side and a metallic region on a semiconductor second side opposite the first side. A lead frame provides respective separate terminals that are electrically and mechanically connected to corresponding conductive pads. A first heat sink comprises a first component having a mating side. A portion of the mating side is directly bonded with the metallic region of the semiconductor device. A circuit board has an opening for receiving the semiconductor device. The lead frame extends outward toward the circuit board or a board first side of the circuit board.

Electronic assembly with one or more heat sinks

A semiconductor module cooler supplies a coolant to a water jacket from outside and cools a semiconductor device arranged on an outer surface of the cooler. The semiconductor module cooler has a heat sink thermally connected to the semiconductor device; a first flow channel arranged inside the water jacket with a guide section extending from a coolant inlet and having an inclined surface for guiding the coolant toward one side surface of the heat sink; a second flow channel arranged inside the water jacket in parallel to the first flow channel and extending to a coolant outlet; and a third flow channel formed inside the water jacket at a position connecting the first flow channel and the second flow channel. The coolant inlet and the coolant outlet are formed on a same wall surface of the water jacket, and the heat sink is arranged in the third flow channel.

Semiconductor module cooler and semiconductor module

A liquid-cooled-type cooling device includes a casing (2) which has a cooling-liquid inlet (11) formed at a rear end portion of the casing and a cooling-liquid outlet (12) formed at a front end portion of the casing. A corrugated fin (17) for forming a plurality of flow channels through which a cooling liquid flows from the rear side toward the front side is disposed within the casing (2) to be located between the cooling-liquid inlet and the cooling-liquid outlet. A heat-generating-body mounting region is provided on an outer surface of a top wall (3) of the casing. Projections (23A, 23B) which come into contact with front and rear end portions of the corrugated fin (17) to thereby position the corrugated fin in the front-rear direction are provided on an inner surface of the bottom wall (4) of the casing at positions shifted, in the left-right direction, from an inner surface region corresponding to the heat-generating-body mounting region.

Liquid-cooled-type cooling device

A semiconductor device has a circuit board including an insulation layer, a wiring layer formed on one surface of the insulation layer, and a buffer layer formed on the other surface of the insulation layer, a semiconductor element bonded to the wiring layer, a radiator member bonded to the buffer layer of the circuit board, and a resin member to seal the semiconductor element and an entire surface of the circuit board including an outer peripheral surface of the buffer layer in the circuit board. A method for manufacturing the semiconductor device includes bonding the buffer layer of the circuit board to the radiator member, bonding the semiconductor element to the wiring layer of the circuit board, and sealing the semiconductor element and an entire surface of the circuit board including an outer peripheral surface of the buffer layer in the circuit board with resin after the two bonding steps.

Semiconductor device and method for manufacturing same

A power conversion device is provided with a plurality of semiconductor modules. Each semiconductor module includes a heat dissipation member, an insulating substrate, a semiconductor element, an external connection terminal, and a resin portion. The insulating substrate is fixed to the heat dissipation member. The semiconductor element is mounted on the insulating substrate. The external connection terminal includes a first end, which is electrically connected to the semiconductor element, and an opposite second end. The resin portion is molded to the insulating substrate, the semiconductor element, the first end, and at least part of the heat dissipation member. The semiconductor modules each form a unit.

Power conversion device

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of alleviating a stress added to an insulating layer in a circuit board, and to provide a method of manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises: semiconductor elements 20 and 21; circuit boards B1 and B2 in which wiring layers 30 are 31 are formed on one surface of ceramic layers 40 and 41, and buffer layers 50 and 51 are formed on the other surface of the ceramic layers 40 and 41, and the semiconductor elements 20 and 21 are bonded to the wiring layers 30 and 31; and a heat radiation plate 60 bonded to the buffer layers 50 and 51 of the circuit boards B1 and B2. The whole surface of the circuit boards B1 and B2 including outer peripheral surfaces of the buffer layers 50 and 51 in the circuit boards B1 and B2, and semiconductor elements 20 and 21, are encapsulated by resin 70 and 71.

Semiconductor device, and method of manufacturing the same

A semiconductor device provided with a temperature detection function having a high temperature detection accuracy for improving the ESD resistance of a temperature detection diode. The semiconductor device has a semiconductor element. A temperature detection diode is used to detect the temperature of the semiconductor element and an ambient temperature of the semiconductor element. A protection diode is connected between a cathode of the temperature detection diode and a ground side of the semiconductor element when the semiconductor element is activated.

Shogo Mori

Papers

Liquid-cooled-type cooling device

Semiconductor device and method for manufacturing same

Power conversion device

Semiconductor device, and method of manufacturing the same

Semiconductor device provided with temperature detection function