The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

It is provided an optical head device which includes: a light source; an objective lens, configured to converge light emitted from the light source to an information recording surface of an optical disk; a beam splitter, configured to deflect returned light reflected by the optical disk into an optical path which is different from an optical path of the light emitted from the light source; a photo detector, configured to detect the returned light deflected by the beam splitter; and a depolarizing element, disposed on an optical path between the beam splitter and the photo detector, and configured to cause the returned light to transmit through while reducing a degree of polarization of the returned light.

Optical head device

A soft contact lens containing a silicone-hydrogel made by curing a reaction mixture containing a silicone-containing monomer.

Soft contact lenses

Disclosed is an objective lens of an optical pick-up that converges light beams of two different wavelengths onto recording layers of optical discs of two different recording densities, respectively. The objective lens includes a refractive lens whose one surface is divided into a common area through which a light beam of a low NA, which is necessary and sufficient for an optical disc having low recording density, passes and a high NA exclusive area through which a light beam of a high NA, which is necessary only for an optical disc having high recording density, passes. A diffractive lens structure is formed in both the areas. The diffractive lens structure in the common area maximizes the diffraction efficiency of the first order and that in the high NA exclusive area maximizes the diffraction efficiency of the second or third order at the wavelength corresponding to the optical disc having high recording density.

Objective lens for optical pick-up

A stack type semiconductor package and a method of fabricating the stack type semiconductor package. The stack type semiconductor package includes: a lower semiconductor package including a circuit board, a semiconductor chip which is disposed on an upper surface of the circuit board, via-pads which are arrayed on the upper surface of the circuit board around the semiconductor chip, and an encapsulation layer which encapsulates the upper surface of the circuit board and has via-holes through which the via-pads are exposed; and an upper semiconductor package which is stacked on the encapsulation layer, is electrically connected to the lower semiconductor package, and comprises internal connection terminals which are formed on a lower surface of the upper semiconductor package.

Stack type semiconductor package and method of fabricating the same

PROBLEM TO BE SOLVED: To generate a minute light beam spot having a deep focusing depth by specifying the relationship between the reduction rate of the light beam spot diameter and the reduction of the sidelobe light intensity distribution. SOLUTION: This device is provided with a laser light source 1, an optical element 5 which converges laser light beams on an optical recording medium 6, a photodetector 8 which detects the light signals that are modulated and reflected by the medium 6, and a phase changing means 4. The means 4 is arranged on an optical axis 90 of the laser light source 1 and the optical recording medium surface 6, and the phases of traveling wave surfaces of laser light beams 1a, 1b and 1c are changed to ring band shaped regions 4a, 4b and 4c centered around the central axis of the luminous flux cross section of the laser light beams. In the regions 4a, 4b and 4c, let r1 be the radius of the inner periphery of the ring band, r2 be the radius of the outer periphery of the ring band and R be the radius of the luminous flux cross section of the laser light beams. Then, select the ratio between the width of the ring band shaped region and the radius R, i.e., ((r2-r1)/R) to be less than in the range of 0.5.

A semiconductor laser device is provided which includes a laser diode chip mounted on a sub-mount, a monitor photo diode incorporated in the sub-mount, for monitoring a laser beam emitted by the laser diode chip, a metallic main plate mounting the laser diode chip and the monitor photo diode, an end-face breaking protective layer covering the laser diode chip and the sub-mount; and a seal resin in which the laser diode chip, the monitor photo diode, the end-face breaking preventive layer and at least a portion of the metallic main plate are sealed. In this semiconductor device, a space is provided at a portion of an interface between the end-face breaking preventive layer and the seal resin, which portion is adapted to be irradiated with a monitor laser beam emitted by the laser diode chip, with a light intensity that is not higher than a half of a peak value of the intensity of the monitor laser beam.

Semiconductor laser device and method for manufacturing the same

A semiconductor laser includes a sealing resin portion with a flat portion covering a main portion of an LD element and a flange portion integrally molded with the flat portion and covering connecting leads on their terminal side. The top and bottom surfaces as well as the side faces of the flat portion are arranged symmetrically with respect to the center of the the connecting leads. The outer periphery of the flange portion has a curvature of a virtual cilcle which has a center of the laser beam emitting point of the LD chip. The virtual circle is determined to have the curvature so that the flange portion can be mounted onto an optical apparatus. The symmetrical arrangement of the flat portion suppresses displacement of the laser beam emitting point caused by thermal stress and the flange portion facilitate mounting of the semiconductor laser device in the same way as the conventional can-type semiconductor laser device.

Semiconductor laser device encapsulated in a transparent resin layer

A fault position analysis method and a fault position analysis device for a semiconductor device, through which a fault position of a SiC semiconductor device can be analyzed and specified by an OBIRCH method, are disclosed. The fault position analysis method for the semiconductor device scans and irradiates a device and a circuit on a front surface of a substrate with a laser beam from a rear surface side of the substrate of the semiconductor device to heat the device and the circuit. It causes a current to flow to the device and the circuit while being heated, detects a change in a resistance value caused by a change in a current, and analyzes the fault position. The semiconductor device is a semiconductor device which uses an N-doped SiC substrate. Laser beams having wavelengths of 650 to 810 nm are used.

Fault position analysis method and fault position analysis device for semiconductor device

A semiconductor laser device includes a lead frame for electrically controlling a laser diode element having at least one end lace for emitting a laser beam and for mechanically supporting the laser diode element on a planar major surface thereof with a support member interposed therebetween. A sealing resin layer, transparent to the passage of the laser beam, covers at least the laser diode element on the lead frame in a sealing manner. To improve the light emitting point stability of the laser diode element, when the cross section of the planar major surface of the lead frame is parallel to the light emitting end face, a horizontal direction is the longitudinal direction of the cross section of the lead frame, a horizontal center line defines the center of the cross section of the lead frame, and a vertical center line defines the center as viewed in the vertical direction, the sealing resin layer is shaped symmetrically with respect to the vertical center line.

Shoji Kitamura

Papers

Optical head device

Semiconductor laser device and method for manufacturing the same

Semiconductor laser device encapsulated in a transparent resin layer

Fault position analysis method and fault position analysis device for semiconductor device

Mold-type semiconductor laser device with reduced light-emitting point displacement during operation