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Shunguang Wan

Researcher at Jilin University

Publications -  34
Citations -  336

Shunguang Wan is an academic researcher from Jilin University. The author has contributed to research in topics: Scratch & Strain gauge. The author has an hindex of 10, co-authored 34 publications receiving 311 citations.

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A novel driving principle by means of the parasitic motion of the microgripper and its preliminary application in the design of the linear actuator.

TL;DR: A novel driving principle by means of the parasitic motion of the microgripper can realize the large displacement range and high speed easily and it can be used to design new linear or rotary actuators.
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Experimental research on a modular miniaturization nanoindentation device.

TL;DR: This paper presents a miniaturization nanoindentation device based on the modular idea that mainly consists of macro-adjusting mechanism, x-y precise positioning platform, z axis precise driving unit, and the load-depth measuring unit.
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Effect of residual chips on the material removal process of the bulk metallic glass studied by in situ scratch testing inside the scanning electron microscope

TL;DR: In this paper, a scratch device was proposed by integrating the parasitic motion principle linear actuator, which can be installed on the stage of the scanning electron microscope (SEM) to carry out in situ scratch testing.
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A novel and compact nanoindentation device for in situ nanoindentation tests inside the scanning electron microscope

TL;DR: In this article, a novel in situ nanoindentation device with dimensions of 103mm×74mm×60mm was presented, which integrates the stepper motor, the piezoelectric actuator and the flexure hinge to realize coarse adjustment of the specimen and precision loading and unloading of the indenter automatically.
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Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

TL;DR: Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon.