A memory cell array has a first and a second storage area. The first storage area has a memory elements selected by an address signal. The second storage area has a memory elements selected by a control signal. A control circuit has a fuse element. When the fuse element has been blown, the control circuit inhibits at least one of writing and erasing from being done on the second storage area.

Nonvolatile Semiconductor Memory Device

A laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate. Next, a through hole extending in the lamination direction is formed in the laminated body. Next, a selective nitridation process is performed to selectively form a charge layer made of silicon nitride in a region of an inner surface of the through hole corresponding to the electrode film. Next, a high-pressure oxidation process is performed to form a block layer made of silicon oxide between the charge layer and the electrode film. Next, a tunnel layer made of silicon oxide is formed on an inner side surface of the through hole. Thus, a flash memory can be manufactured in which the charge layer is split for each electrode film.

Semiconductor memory device and method for manufacturing same

A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.

Memory element and memory device

An asymmetrically programmed memory material (such as a solid electrolyte material) is described for use as a rectifying element for driving symmetric or substantially symmetric resistive memory elements in a crosspoint memory architecture. A solid electrolyte element (SE) has very high resistance in the OFF state and very low resistance in the ON state (because it is a metallic filament in the ON state). These attributes make it a near ideal diode. During the passage of current (during program/read/erase) of the memory element, the solid electrolyte material also programs into the low resistance state. The final state of the solid electrolyte material is reverted to a high resistance state while making sure that the final state of the memory material is the one desired.

Rectifying element for a crosspoint based memory array architecture

A semiconductor memory device includes a semiconductor substrate, an isolation insulation film filled in a plurality of trenches formed in the semiconductor substrate to define a plurality of element formation regions, a floating gate of polysilicon provided on each of the element formation regions through a first insulation film, a second insulation film, provided on the floating gate, containing a metal element, a control gate of polysilicon, provided on the second insulation film, and source/drain regions provided in the semiconductor substrate, both a polysilicon conductive layer containing a metal element and a mutual diffusion layer composed of a silicate layer of a mixed oxide material composed of a silicon element contained in the floating gate and the control gate and a metal element contained in the second insulation film are provided on a surface of each of the floating gate and the control gate, respectively.

Semiconductor memory device and method of manufacturing the same

A nonvolatile memory element comprises a first electrode layer ( 103 ), a second electrode ( 107 ), and a resistance variable layer ( 106 ) which is disposed between the first electrode layer ( 103 ) and the second electrode layer ( 107 ), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes ( 103 ), ( 107 ), wherein the resistance variable layer ( 106 ) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

A writing method of a variable resistance non-volatile memory element comprises determining, in a first determination step, whether or not a resistance state of the variable resistance non-volatile memory element does not switch to a first resistance state and remains in a second resistance state, when a pulse of a second voltage is applied to the variable resistance non-volatile memory element; and when it is determined that the resistance state of the variable resistance non-volatile memory element does not switch to the first resistance state and remains in the second resistance state in the first determination step, applying, in a recovery step, at least once to the variable-resistance non-volatile memory element a recovery voltage pulse set composed of two pulses which are a first recovery voltage pulse which has the same polarity as that of the first voltage and a second recovery voltage pulse which has the same polarity as that of the second voltage, has a greater amplitude than the second voltage, and is applied subsequently to the first recovery voltage pulse.

Writing method of variable resistance non-volatile memory element and variable resistance non-volatile memory device

A nonvolatile storage element is provided with a first electrode layer (103), a second electrode layer (107), and a resistance change layer (106) that is interposed between the first electrode layer (103) and the second electrode layer (107) and has a resistance value which reversibly changes on the basis of electrical signals given between both electrodes (103) and (107). This resistance change layer (106) has a laminated structure in which a first tantalum-containing layer having a composition represented by TaOx (wherein, 0≤x<2.5) and a second tantalum-containing layer having a composition represented by TaOy (wherein, x<y) are laminated.

Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element

A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.

Memory device, memory circuit and semiconductor integrated circuit having variable resistance

A resistance variable element of the present invention and a resistance variable memory apparatus using the resistance variable element are a resistance variable element (10) including a first electrode, a second electrode, and a resistance variable layer (3) provided between the first electrode (2) and the second electrode (4) to be electrically connected to the first electrode (2) and the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure represented by a chemical formula of (ZnxFe1-x)Fe2O4, and the resistance variable element (10) has a feature that an electrical resistance between the first electrode (2) and the second electrode (4) increases by applying a first voltage pulse to between the first electrode (2) and the second electrode (4), and the electrical resistance between the first electrode (2) and the second electrode (4) decreases by applying a second voltage pulse whose polarity is the same as the first voltage pulse to between the first electrode (2) and the second electrode (4), and a resistance variable memory apparatus using the resistance variable element (10).

Shunsaku Muraoka

Papers

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

Writing method of variable resistance non-volatile memory element and variable resistance non-volatile memory device

Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element

Memory device, memory circuit and semiconductor integrated circuit having variable resistance

Resistance variable element and resistance variable memory apparatus