Matrix Factorization Techniques for Recommender Systems

In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band‐gap semiconductors the most promising ...

Semiconductor ultraviolet detectors

Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.

https://iopscience.iop.org/article/10.1088/0268-1242/18/4/201/pdf

Wide-bandgap semiconductor ultraviolet photodetectors

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Au contacts. The B-FTS approach exhibits the unique feature of ultra-rapid growth of ZnO nanotetrapods within few milliseconds and simultaneously in situ bridging electrical contacts. These bridging nanotetrapods were directly integrated on a chip and demonstrated signifi cantly improved performances as a UV photodetector. Comparison of the UV photodetectors performances built from interpenetrating ZnO nano-microstructures fabricated by B-FTS and C-FTS techniques are presented. Fastest response/recovery time constant (≈32 ms) under 365 nm UV light irradiation of B-FTS-made photodetectors (on/off ratio ≈4.5 ◊ 10 3 at 2.4 V) is reported. Different type of nanojunctions formed between neighbor nanowires or nanotetrapods (with ‘arm’ thickness <50 nm) could be the reason for such improved characteristics. The role of nanojunctions in fast UV photodetectors from networked ZnO nanowires and nanotetrapods is discussed. On the basis of the rapid B-FTS fabrication process and fast UV photodetection capabilities, such networked ZnO nanotetrapods can be potential candidates for various nanosensor applications.

Rapid fabrication technique for interpenetrated ZnO nanotetrapod networks for fast UV sensors.

Planar metal–diamond–metal photoconductive devices have been fabricated from free standing large grain (20–30 μm) polycrystalline thin film diamond. An interdigitated electrode design with spacings of 20 μm was used to produce effective UV photodetecting devices at bias values in the range 0.1–10 V. A methane‐air treatment has been used to modify the structures such that unprecedented performance characteristics have been recorded (106 higher response to 200 nm than visible wavelengths, <0.1 nA dark currents); spectral features similar to those observed in natural diamond crystals have been observed indicating that the treatment used led to near ideal electronic characteristics from polycrystalline material.

Polycrystalline diamond photoconductive device with high UV-visible discrimination

Photoconductive properties of thin film diamond

A photodiode has been constructed from lightly boron doped, Si supported, thin film chemically vapor deposited (CVD) diamond which shows over five orders of magnitude discrimination between deep UV (≤220 nm) and visible light A thin (10 nm) gold Schottky barrier with an associated Ti–Ag–Au ohmic contact was used to create a rectifying device with low (≤2 pA) dark currents when reversed biased This structure showed a sharp cut off in photoresponse at 220 nm, the band gap energy of diamond Conversely, a photoconductive device fabricated from similar (nominally undoped) material gave a broader UV photoresponse and displayed high dark currents; the superior performance of the diode structure on fine grain material is discussed

Thin film diamond photodiode for ultraviolet light detection

Auger electron spectroscopy was used to analyze polycrystalline thin‐film diamond surfaces following the use of differing methods for the removal of unwanted nondiamond carbon. Exposing the film to a hydrogen plasma at the termination of the growth process is effective for producing a surface that gives an Auger spectrum typical of diamond with little contamination. Strongly oxidizing solutions involving sulfuric acid generate low concentrations of surface sulfur together with an oxide phase. However, in the case of an ammonium persulfate–sulfuric acid etchant solution, the Auger features associated with the diamond more closely resemble those of single crystal material suggesting that this treatment may offer better performance when used during the fabrication of thin‐film diamond electronic devices.

Simon S.M. Chan

Papers

Polycrystalline diamond photoconductive device with high UV-visible discrimination

Photoconductive properties of thin film diamond

Thin film diamond photodiode for ultraviolet light detection

Cleaning thin-film diamond surfaces for device fabrication: An Auger electron spectroscopic study

Thin film diamond UV photodetectors: Photodiodes compared with photoconductive devices for highly selective wavelength response