S
Sobhit Saxena
Researcher at Lovely Professional University
Publications - 21
Citations - 90
Sobhit Saxena is an academic researcher from Lovely Professional University. The author has contributed to research in topics: Metaheuristic & Engineering. The author has an hindex of 3, co-authored 14 publications receiving 40 citations. Previous affiliations of Sobhit Saxena include Indian Institute of Technology Roorkee.
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Role of calcination atmosphere in vanadium doped Li4Ti5O12 for lithium ion battery anode material
Sobhit Saxena,Anjan Sil +1 more
TL;DR: In this paper, the authors showed that Li4Ti5O12 (LTO) with enhanced properties can replace the conventional carbonaceous anode material of lithium ion battery and showed that it has higher charge-discharge capacities at almost all C-rates.
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A novel statistical approach to numerical and multidisciplinary design optimization problems using pattern search inspired Harris hawks optimizer
TL;DR: In this paper, a hybrid Harris hawks pattern search algorithm (hHHO-PS) is proposed to solve the problem of constrained engineering optimization problems, where the pattern search is used to identify the discovery process of the current optimiser.
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hSMA-PS: a novel memetic approach for numerical and engineering design challenges
TL;DR: In a comprehensive collection of tests, the proposed hybrid Slime Mould Algorithm (SMA) – Pattern Search Al algorithm (PS) (hSMA-PS) has been evaluated by comparing against accurate and reliable meta-heuristics for accuracy testing and demonstrates that the suggested algorithm enjoys efficiency, sometimes amazing result on sophisticated search landscapes.
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Improved electrochemical performance of Li4Ti5O12 by reducing rutile TiO2 phase impurity and particle size
Hari Raj,Sobhit Saxena,Anjan Sil +2 more
TL;DR: In this article, a pure lithium titanate (Li4Ti5O12) powder having particle size of 100 (±38) nm has been prepared by solid-state synthesis method, using planetary ball milling at lower speed of 900-rpm as compared to high energy ball-milling (3000-rpm) and characterized by X-ray diffractometer, field emission scanning electron microscopy and thermogravimetric analysis.
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Asymmetric gated Ge-Si0.7Ge0.3 nHTFET and pHTFET for steep subthreshold characteristics
TL;DR: In this paper, an asymmetric Ge-Si0.7Ge0.3 hetero-junction tunnel FET (HTFET) is proposed with different oxide thickness from source and drain side.