A quantum?tunneling metal?insulator?metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP?CVD) for the first time. This scalable method is used to produce MIM diodes with high?quality, pinhole?free Al2O3 films more rapidly than by conventional vacuum?based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum?enabled devices. In fact, the MIM diodes fabricated by AP?CVD show a lower effective barrier height (2.20 eV) at the electrode–insulator interface than those fabricated by conventional plasma?enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero?bias resistance, and better asymmetry of 107.

Quantum-Tunneling Metal-Insulator-Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

In this approach, nickel-doped zinc oxide (NZO) nanostructure materials were synthesized by the solution method in the basic phase As-grown NZO was characterized in detail by field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray electron microscopy (XPS), X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV/vis), Brunauer–Emmett–Teller (BET), electrochemical impedance spectroscopy (EIS), and Fourier transform infrared spectroscopy (FTIR) A glassy carbon electrode (GCE) was modified by NZO as NZO/Nafion/GCE by the drop-coating method The electrocatalytic activities were also studied by impedance spectroscopy (EIS) as well as cyclic voltammetry (CV) with NZO/Nafion/GCE in ferrocyanide couples Then, the modified electrode was employed for the determination of hydrazine (HZ) by a simple and reliable electrochemical approach Carcinogenic HZ was nominated as a target pollutant in the selectivity investigation In this investigation for measuring HZ in the concentration range 020 nM to 002 M, the calibration plot was found to be linear (r2 = 09996) The sensitivity and limit of detection (LOD) values were obtained as 376 μA μM−1 cm−2 and 17 ± 01 pM (S/N = 3), respectively

Fabrication of a hydrazine chemical sensor based on facile synthesis of doped NZO nanostructure materials

In this paper, zinc nitride (Zn3N2)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn3N2 TFTs were characterized while bent to 5-mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm $^{2}/\text{V}\cdot \text{s}$ and an ON/OFF current ratio close to 105 after several cycles of bending and being exposed to air ambient for 30 days.

/pdf/flexible-zinc-nitride-thin-film-transistors-using-spin-on-32rvmhjztn.pdf

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Solution processed aluminum-doped ZnO thin films for transparent heater applications

Spray-coating using ultrasonic nebulization is reported for depositing nanoparticles on a TEM grid without many of the drying artifacts that are often associated with drop-casting. Spray-coating is suitable for preparing TEM samples on fragile support materials, such as suspended single-layer graphene, that rupture when samples are prepared by drop-casting. Additionally, because ultrasonic nebulization produces uniform droplets, nanoparticles deposited by spray-coating occur on the TEM grid in clusters, whose size is dependent on the concentration of the nanoparticle dispersion, which may allow the concentration of nanoparticle dispersions to be estimated using TEM.

Ultrasonic Nebulization for TEM Sample Preparation on Single-Layer Graphene Grids

Low-temperature ultrasonic spray deposited aluminum doped zinc oxide film and its application in flexible Metal-Insulator-Semiconductor diodes

In this study, hafnium oxide (HfO2) thin films were deposited by spin coating technique at different low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflectance mode. The films exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in the characterization of the HfO2 films.

Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

The realization of electronic devices on flexible substrates (flexible electronics) has an important role in large area technological innovation. Semiconductor oxides are an option to implement low processing temperatures on these materials. In this work, flexible metal-insulator-semiconductor (MIS) capacitors were fabricated using zinc oxide (ZnO) and indium-doped zinc oxide (IZO) as semiconductor materials, spin-on glass (SOG) as insulator and indium doped tin oxide (ITO) as contact, deposited by solution techniques at 200 °C on PET substrates. The films were characterized by FTIR spectroscopy and four-points probe. The resistivity of the IZO films decreases with increasing doping. However, the resistivity of the film increases with the 6 wt.% doping concentration. Through FT-IR spectroscopy an irregular behavior was observed when the ZnO films are doped with In 6 wt. %. It was found that at this concentration the film has a lower amount of C-O, COO- and O-H bonds with respect to the rest of the doped and undoped films. These groups can behave as charge traps, limiting the charge transport on the semiconductor thin films. Also, an unusual displacement of the Zn-O and COO- bonds is observed, probably due to an inductive effect. This effect could imply the existence of a permanent dipole which increases the electron density due to the occupied antibonding states. The reduction of organic residuals is corroborated with the hysteresis behavior through the fabrication and characterization of MIS capacitors.

/pdf/influence-of-inductive-effect-in-organic-residuals-content-2e47p8rn5j.pdf

Sonia Ceron

Papers

Low-temperature ultrasonic spray deposited aluminum doped zinc oxide film and its application in flexible Metal-Insulator-Semiconductor diodes

Analysis and Study of Characteristic FTIR Absorption Peaks in Hafnium Oxide Thin Films Deposited at Low-Temperature

Influence of Inductive Effect in Organic Residuals Content in IZO Thin Films and the Performance on the Behavior of MIS Capacitors on Plastic