This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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Physics of thin-film ferroelectric oxides

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A closed-loop control system is disclosed for use with an electrosurgical generator that generates electrosurgical energy. The closed loop control system includes a user interface for allowing a user to select at least one pre-surgical parameter, such as the type of surgical instrument operatively connected to the generator, the type of tissue and the desired surgical effect. A sensor module is also included for continually sensing at least one of electrical and physical properties proximate a surgical site and generating at least one signal relating thereto. The system also includes a control module for continually receiving the at least one selected pre-surgical parameter from the user interface and each of the signals from the sensor module, and processing each of the signals in accordance with the at least one pre-surgical parameter using at least one of a microprocessor, computer algorithm and a mapping. The control module generates at least one corresponding control signal relating to each signal from the sensor module, and relays the control signal to the electrosurgical generator for controlling the same. A method is also disclosed for performing an electrosurgical procedure at a surgical site on a patient. The method includes the steps of: applying at least one electrical pulse to the surgical site; continually sensing electrical and physical properties proximate the surgical site; and varying pulse parameters of individual pulses of the at least one pulse in accordance with the continually-sensed properties.

Method and system for controlling output of RF medical generator

An electrosurgical system is disclosed. The electrosurgical system includes an electrosurgical generator adapted to supply electrosurgical energy to tissue. The electrosurgical generator includes impedance sensing circuitry which measures impedance of tissue, a microprocessor configured to determine whether a tissue reaction has occurred as a function of a minimum impedance value and a predetermined rise in impedance, wherein tissue reaction corresponds to a boiling point of tissue fluid, and an electrosurgical instrument including at least one active electrode adapted to apply electrosurgical energy to tissue.

Vessel sealing system

An electrosurgical system is disclosed. The electrosurgical system includes an electrosurgical generator adapted to supply electrosurgical energy to tissue. The electrosurgical generator includes impedance sensing circuitry which measures impedance of tissue, a processor configured to determine whether a tissue reaction has occurred as a function of a minimum impedance value and a predetermined rise in impedance, wherein tissue reaction corresponds to a boiling point of tissue fluid, and an electrosurgical instrument including at least one active electrode adapted to apply electrosurgical energy to tissue. A tissue cooling period is provided to enhance operative outcomes.

System and method for tissue sealing

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.

Integrated circuit and method

An embodiment of the instant invention is a ferroelectric capacitor formed over a semiconductor substrate, the ferroelectric capacitor comprising: a bottom electrode formed over the semiconductor substrate, the bottom electrode comprised of a bottom electrode material (304 of FIG. 4 a); a top electrode formed over the bottom electrode and comprised of a first electrode material (306 and 308 of FIG. 4a); a ferroelectric material (306 of FIG. 4 a) situated between the top electrode and the bottom electrode; and a hardmask formed on the top electrode and comprising a bottom hardmask layer (402 of FIG. 4 a) and a top hardmask layer (408 of FIG. 4 a) formed on the bottom hardmask layer, the top hardmask layer able to with stand etchants used to etch the bottom electrode, the top electrode, and the ferroelectric material to leave the bottom hardmask layer substantially unremoved during the etch and the bottom hardmask layer being comprised of a conductive material which substantially acts as a hydrogen diffusion barrier.

Hardmask designs for dry etching FeRAM capacitor stacks

An embodiment of the instant invention is a method of forming a conductive barrier layer on a dielectric layer, the method comprising the steps of: providing the dielectric layer ( 112 of FIG 7 d ) having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug ( 704 of FIG 7 d ) having a top surface substantially coplanar with the top surface of the dielectric layer; subjecting the top surface of the dielectric layer and the top surface of the conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH 4 , and any combination thereof, the gas being incorporated into a high-temperature ambient or a plasma; and forming the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the step of subjecting the top surface of the dielectric layer and the top surface of the conductive plug to the gas incorporated into the high-temperature ambient or the plasma

Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications

In one aspect, a data communication system includes a modulator, an integrated acoustic data coupler, and a demodulator. The modulator modulates a carrier signal having a frequency in an operating frequency range in response to an input data signal and provides the modulated carrier signal at a modulator output. The integrated acoustic data coupler includes an acoustically resonant structure that has one or more acoustic resonant frequencies in the operating frequency range. The acoustically resonant structure includes a first thin film electro-acoustic transducer electrically coupled to the modulator output, a second thin film electro-acoustic transducer, and a substrate. The substrate supports, acoustically couples, and provides an electrical isolation barrier between the first and second thin film electro-acoustic transducers. The demodulator has a demodulator input coupled to the second thin film electro-acoustic transducer and is operable to generate an output data signal from an input signal received at the demodulator input.

Acoustically communicating data signals across an electrical isolation barrier

A method of fabricating a ferroelectric capacitor is disclosed. The method comprises the decreases a reduction in a bottom electrode material during formation of the ferroelectric dielectric portion of the capacitor. In the above manner, a fatigue resistance of the ferroelectric capacitor is increased substantially.

Stephen R. Gilbert

Papers

Integrated circuit and method

Hardmask designs for dry etching FeRAM capacitor stacks

Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications

Acoustically communicating data signals across an electrical isolation barrier

Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing